Datasheet

Features
NPN Transistors
• Silicon epitaxial planar transistors
• For switching and amplifier applications
1. Collector 2. Base 3. Emitter
TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25°C)
Collector Base Voltage
V
CB
O
80
50
30
V
Collector Emitter Voltage
V
CE
O
65
45
30
V
Emitter Base Voltage V
EBO
6 V
Collector Current (DC) I
C
100 mA
Peak Collector Current I
CM
200 mA
Total Power Dissipation
P
tot
500 mW
Junction Temperature
T
j
150
O
C
Storage Temperature Range T
stg
- 65 to + 150
O
C
Characteristics at Ta = 25°C
Parameter Max. Unit
DC Current Gain
at V
CE
= 5 V,
I
C
= 2 mA
h
FE
h
FE
h
FE
110
200
420
220
450
800
-
-
-
Collector Base Cutoff Current
at V
CB
= 30 V
I
CBO
- 15 nA
Emitter Base Cutoff Current
at V
EB
= 5 V
I
EBO
- 100
nA
Collector Base Breakdown Voltage
at I
C
= 100 µA
V
(BR)CBO
80
50
30
-
-
-
V
C
ollector Emitter Breakdow
n Voltage
at I
C
= 1 mA
V
(BR)CEO
65
45
30
-
-
-
V
Emitter Base Breakdown Voltage
atI
E
= 10 µA
6 V
(BR)EBO
- V
RND BC546 (A,B,C), RND BC547 (B,C)
RND BC548 (B,C)
RND BC549 (A,B)
RND BC546 (A,B,C), RND BC547 (B,C)
RND BC548 (B,C)
RND BC549 (A,B)
Symbol Min.
R
ND BC546 (A,B,C), RND BC547 (B,C)
RND BC548 (B,C)
RND BC549 (A,B)
RND BC546 (A,B,C), RND BC547 (B,C)
RND BC548 (B,C)
RND BC549 (A,B)
RND BC546A, RND BC549A
RND BC546B, RND BC547B, RND BC548B, RND BC549B
RND BC546C, RND BC547C, RND BC548C
Symbol
Un
it
Parameter
Value
Distrelec Schweiz AG, Grabenstrasse 6, 8606 Nänikon, Switzerland, T [phone], [e-mail], distrelec.com