Datasheet

RJH60F6DPQ-A0 Preliminary
R07DS0327EJ0200 Rev.2.00 Page 4 of 7
Jul 22, 2011
Capacitance C (pF)
1
10
100
1000
10000
010050 150 200 250
300
Gate Charge Qg (nc)
Dynamic Input Characteristics (Typical)
Typical Capacitance vs.
Collector to Emitter Voltage
800
600
400
200
0
0
16
12
8
4
0
40 80 120
160
I
C
= 25 A
Ta = 25
° C
V
GE
V
CE
V
CC
= 600 V
300 V
V
CC
= 600 V
300 V
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
Cies
Coes
Cres
V
GE
= 0 V
f = 1 MHz
Ta = 25
° C
Diode Forward Current I
F
(A)
0
20
40
60
80
100
0123
4
V
GE
= 0 V
Ta = 25
° C
Pulse Test
C-E Diode Forward Voltage V
CEF
(V)
Forward Current vs. Forward Voltage (Typical)