IPD048N06L3 G datasheet

Type
IPD048N06L3 G
OptiMOS
(TM)
3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R
DS(on)
product (FOM)
• Very low on-resistance R
DS(on)
• N-channel, logic level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC
1)
for target applications
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
C
=25 °C
2)
90 A
T
C
=100 °C
82
Pulsed drain current
3)
I
D,pulse
T
C
=25 °C
360
Avalanche energy, single pulse
4)
E
AS
I
D
=90 A, R
GS
=25 Ω
68 mJ
Gate source voltage
V
GS
±20 V
Power dissipation
P
tot
T
C
=25 °C
115 W
Operating and storage temperature
T
j
, T
stg
-55 ... 175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
4)
See figure 13 for more detailed information
Value
1)
J-STD20 and JESD22
2)
Current is limited by bondwire; with an R
thJC
=1.3 K/W the chip is able to carry 115 A.
3)
See figure 3 for more detailed information
V
DS
60 V
R
DS(on),max
4.8
mΩ
I
D
90 A
Product Summary
Type
IPD048N06L3 G
Package
PG-TO-252-3
Marking
048N06L
Rev. 2.0 page 1 2008-12-09