DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD712 750 MHz, 18.
Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier FEATURES BGD712 PINNING - SOT115J • Excellent linearity PIN • Extremely low noise DESCRIPTION 1 • Excellent return loss properties input 2, 3 • Silicon nitride passivation common 5 • Rugged construction +VB 7, 8 • Gold metallization ensures excellent reliability. common 9 output APPLICATIONS • CATV systems operating in the 40 to 750 MHz frequency range.
Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier BGD712 CHARACTERISTICS Bandwidth 40 to 750 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω SYMBOL Gp PARAMETER power gain CONDITIONS MIN. TYP. MAX. UNIT f = 45 MHz 18.2 18.5 18.8 dB f = 750 MHz 19 19.5 20 dB dB SL slope straight line f = 45 to 750 MHz; note 1 0.5 1 1.5 FL flatness straight line f = 45 to 100 MHz − − ±0.35 dB f = 100 to 700 MHz − − ±0.
Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier SYMBOL CSO PARAMETER composite second order distortion CONDITIONS BGD712 MIN. TYP. MAX. UNIT 112 channels flat; Vo = 44 dBmV; fm = 746.5 MHz − − −63 dB 79 channels flat; Vo = 44 dBmV; fm = 548.5 MHz − − −68 dB 79 channels; fm = 746.5 MHz; Vo = 49.
Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier MCD842 −50 (1) −60 56 handbook, halfpage Vo (dBmV) CTB (dB) MCD843 −50 56 handbook, halfpage BGD712 Vo (dBmV) Xmod (dB) (1) −60 52 (2) 52 (3) (4) −70 48 −70 48 −80 (2) (3) (4) 44 −80 44 −90 0 200 400 600 f (MHz) −90 40 800 0 200 400 ZS = ZL = 75 Ω; VB = 24 V; 79 channels; tilt = 7.3 dB (50 to 550 MHz). ZS = ZL = 75 Ω; VB = 24 V; 79 channels; tilt = 7.3 dB (50 to 550 MHz).
Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier BGD712 PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J D E Z p A2 1 2 3 5 7 8 9 A L F S W c e b w M e1 d U2 q2 Q B y M B q1 y M B y M B p U1 q 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. mm 20.8 9.
Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier BGD712 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification.
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