Datasheet

Product Standards
Transistors with Built-in Resistor
DRA3115T0L
 Absolute Maximum Ratings Ta = 25 C
 Electrical Characteristics Ta = 25 C  3 C
Note
)
1.
Page
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
+85 °COperating ambient temperature Topr -40 to
Symbol Conditions
Storage temperature
1.
2.
3.
Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard)
Parameter Symbol Rating Unit
 Marking Symbol:
LT
Code
Base
Emitter
SOT-723
Panasonic
 Packaging
SSSMini3-F2-B
JEITA
DRA3115T0L
Silicon PNP epitaxial planar type
For digital circuits
Complementary to DRC3115T
DRA9115T in SSSMini3 type package
 Features



Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
High forward current transfer ratio hFE with excellent linearity
SC-105AA
Collector
Unit: mm
Internal Connection
Resistance
value
1of3
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO -50 V
Collector-emitter voltage (Base open) VCEO -50 V
Collector current IC -100 mA
Total power dissipation PT 100 mW
Tstg -55 to
Collector-base voltage (Emitter open) VCBO
IC = -10 μA, IE = 0 -50 V
Parameter
Collector-emitter voltage (Base open) VCEO
IC = -2 mA, IB = 0 -50 V
Collector-base cutoff current (Emitter open)
ICBO
VCB = -50 V, IE = 0 -0.1 μA
Collector-emitter cutoff current (Base open)
ICEO
VCE = -50 V, IB = 0 -0.5 μA
Emitter-base cutoff current (Collector open)
IEBO
VEB = -6 V, IC = 0 -0.01 mA
Forward current transfer ratio hFE
VCE = -10 V, IC = -5 mA 160 460 -
Collector-emitter saturation voltage VCE(sat)
IC = -10 mA, IB = -0.5 mA -0.25 V
Input voltage
Vi(on)
VCE = -0.2 V, IC = -5 mA
Vi(off)
VCE = -5 V, IC = -100 μA
-4.3 V
-0.4 V
100 +30%
k

Input resistance R1
-30%
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
R1
100
k
+150 °C
Junction temperature Tj 150 °C
C
B
R
1
E
1.2
1.2
0.52
0.8
0.2
0.8
0.3
(0.4)
0.13
12
3
(0.4)
Doc No.
TT4-EA-11672
Revision.
2
Established
:
2009-10-23
Revised
:
2014-02-12