Datasheet

PMP5201V_G_Y_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 28 August 2009 5 of 14
NXP Semiconductors
PMP5201V; PMP5201G; PMP5201Y
PNP/PNP matched double transistors
[1] V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
[2] V
BE
decreases by about 2 mV/K with increasing temperature.
[3] The smaller of the two values is taken as the numerator.
[4] The smaller of the two values is subtracted from the larger value.
V
BE
base-emitter voltage V
CE
= −5V;
I
C
= −2mA
[2]
−600 −650 −700 mV
V
CE
= −5V;
I
C
= −10 mA
[2]
--−760 mV
C
c
collector capacitance V
CB
= −10 V;
I
E
=i
e
=0A;
f=1MHz
- - 2.2 pF
C
e
emitter capacitance V
EB
= −0.5 V;
I
C
=i
c
=0A;
f=1MHz
-10-pF
f
T
transition frequency V
CE
= −5V;
I
C
= −10 mA;
f = 100 MHz
100 175 - MHz
NF noise figure V
CE
= −5V;
I
C
= −0.2 mA;
R
S
=2kΩ;
f = 10 Hz to
15.7 kHz
- 1.6 - dB
V
CE
= −5V;
I
C
= −0.2 mA;
R
S
=2kΩ;
f = 1 kHz;
B = 200 Hz
- 3.1 - dB
Per device
h
FE1
/h
FE2
h
FE
matching V
CE
= −5V;
I
C
= −2mA
[3]
0.98 1 -
V
BE1
−V
BE2
V
BE
matching V
CE
= −5V;
I
C
= −2mA
[4]
--2mV
Table 8. Characteristics
…continued
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit