Datasheet

2004 Jan 22 3
NXP Semiconductors Product data sheet
PNP Darlington transistor PMBTA64
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= −30 V − −100 nA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= −10 V; − −100 nA
h
FE
DC current gain I
C
= −10 mA; V
CE
= −5 V; (see Fig.2) 10 000 −
I
C
= −100 mA; V
CE
= −5 V; (see Fig.2) 20 000 −
V
CEsat
collector-emitter saturation voltage I
C
= −100 mA; I
B
= −0.1 mA − −1.5 V
V
BEon
base-emitter on-state voltage I
C
= −100 mA; V
CE
= −5 V − −2 V
f
T
transition frequency I
C
= −50 mA; V
CE
= −5 V; f = 100 MHz 125 − MHz
Fig.2 DC gain current; typical values.
handbook, full pagewidth
0
100000
20000
40000
60000
80000
h
FE
MGD836
−1 −10
I
C
(mA)
−10
2
−10
3
V
CE
= −2 V