Datasheet

2004 Jan 21 3
NXP Semiconductors Product data sheet
NPN switching transistor PMBT4401
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 µs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th (j-a)
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector-base cut-off current I
E
= 0; V
CB
= 60 V − 50 nA
I
EBO
emitter-base cut-off current I
C
= 0; V
EB
= 6 V − 50 nA
h
FE
DC current gain V
CE
= 1 V; (see Fig.2)
I
C
= 0.1 mA 20 −
I
C
= 1 mA 40 −
I
C
= 10 mA 80 −
I
C
= 150 mA; note 1 100 300
I
C
= 500 mA; V
CE
= 2 V; note 1 40 −
V
CEsat
collector-emitter saturation
voltage
I
C
= 150 mA; I
B
= 15 mA; note 1 − 400 mV
I
C
= 500 mA; I
B
= 50 mA; note 1 − 750 mV
V
BEsat
base-emitter saturation voltage I
C
= 150 mA; I
B
= 15 mA; note 1 − 950 mV
I
C
= 500 mA; I
B
= 50 mA; note 1 − 1.2 V
C
c
collector capacitance I
E
= I
e
= 0; V
CB
= 5 V; f = 1 MHz − 8 pF
C
e
emitter capacitance I
C
= I
c
= 0; V
EB
= 500 mV; f = 1 MHz − 30 pF
f
T
transition frequency I
C
= 20 mA; V
CE
= 10 V; f = 100 MHz 250 − MHz
Switching times (between 10% and 90% levels); (see Fig.3)
t
on
turn-on time I
Con
= 150 mA; I
Bon
= 15 mA;
I
Boff
= −15 mA
− 35 ns
t
d
delay time − 15 ns
t
r
rise time − 20 ns
t
off
turn-off time − 250 ns
t
s
storage time − 200 ns
t
f
fall time − 60 ns