Datasheet

NXP Semiconductors
PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
PHPT61003NY All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 3 February 2014 11 / 16
12. Package outline
References
Outline
version
European
projection
Issue date
IEC JEDEC JEITA
SOT669
MO-235
sot669_po
11-03-25
13-02-27
Unit
(1)
mm
max
nom
min
1.20
1.01
0.15
0.00
0.25
0.50
0.35
4.41
3.62
2.2
2.0
6.2
5.8
0.85
0.40
A
Dimensions (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads SOT669
A
1
A
2
1.10
0.95
A
3
b b
2
b
3
0.1
L
2
w y
8
°
0
°
θ
b
4
c c
2
D
(1)
D
1
(1)
E
(1)
E
1
(1)
3.3
3.1
e
1.27
H L
0.25
0.19
0.30
0.24
4.20 1.3
0.8
0.25
0.9
0.7
4.10
3.80
5.0
4.8
1.3
0.8
L
1
A C
1/2 e
w A
0 5 mm
scale
e
E
1
b
c
2
A
2
1
2 3 4
mounting
base
D
1
c
E
b
2
b
3
b
4
H
D
L
2
L
1
C
X
y C
q
(A
3
)
L
A
A
1
detail X
Fig. 14. Package outline LFPAK56; Power-SO8 (SOT669)