Datasheet

PBSS5620PA_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 13 April 2010 2 of 15
NXP Semiconductors
PBSS5620PA
20 V, 6 A PNP low V
CEsat
(BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1base
2emitter
3 collector
Transparent top view
12
3
sym01
3
3
2
1
Table 3. Ordering information
Type number Package
Name Description Version
PBSS5620PA HUSON3 plastic thermal enhanced ultra thin small outline package;
no leads; three terminals; body 2 × 2 × 0.65 mm
SOT1061
Table 4. Marking codes
Type number Marking code
PBSS5620PA AA
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - −20 V
V
CEO
collector-emitter voltage open base - −20 V
V
EBO
emitter-base voltage open collector - −7V
I
C
collector current - −6A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- −7A
I
B
base current - −600 mA
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
-500mW
[2]
-1W
[3]
-1.4W
[4]
-2.1W