Datasheet

2004 Nov 04 7
NXP Semiconductors Product data sheet
40 V, 5 A
PNP low V
CEsat
(BISS) transistor
PBSS5540X
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= −30 V; I
E
= 0 A − − −100 nA
V
CB
= −30 V; I
E
= 0 A;
T
j
= 150 °C
− − −50 μA
I
EBO
emitter-base cut-off current V
EB
= −5 V; I
C
= 0 A − − −100 nA
h
FE
DC current gain V
CE
= −2 V; I
C
= −0.5 A 250 − −
V
CE
= −2 V; I
C
= −1 A;
note
1
200 − −
V
CE
= −2 V; I
C
= −2 A;
note
1
150 − −
V
CE
= −2 V; I
C
= −5 A;
note
1
50 − −
V
CEsat
collector-emitter saturation
voltage
I
C
= −0.5 A; I
B
= −5 mA − − 120 mV
I
C
= −1 A; I
B
= −10 mA − − 170 mV
I
C
= −2 A; I
B
= −200 mA − − 160 mV
I
C
= −4 A; I
B
= −200 mA;
note
1
− − 340 mV
I
C
= −5 A; I
B
= −500 mA;
note
1
− − 375 mV
R
CEsat
equivalent on-resistance I
C
= −5 A; I
B
= −500 mA;
note
1
− 45 75 mΩ
V
BEsat
base-emitter saturation
voltage
I
C
= −4 A; I
B
= −200 mA;
note
1
− − −1.1 V
I
C
= −5 A; I
B
= −500 mA;
note
1
− − −1.2 V
V
BEon
base-emitter turn-on voltage V
CE
= −2 V; I
C
= −2 A − − −1.0 V
f
T
transition frequency V
CE
= −10 V; I
C
= −0.1 A;
f
= 100 MHz
60 − − MHz
C
c
collector capacitance V
CB
= −10 V; I
E
= i
e
= 0 A;
f
= 1 MHz
− − 105 pF