Datasheet

PBSS5160DS_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 9 October 2008 9 of 14
NXP Semiconductors
PBSS5160DS
60 V, 1 A PNP/PNP low V
CEsat
(BISS) transistor
8. Test information
Fig 13. BISS transistor switching time definition
I
C
= −0.5 A; I
Bon
= −25 mA; I
Boff
= 25 mA; R1 = open; R2 = 100 Ω; R
B
= 300 Ω; R
C
=20Ω
Fig 14. Test circuit for switching times
006aaa266
−
I
Bon
(100 %)
−
I
B
input pulse
(idealized waveform)
−
I
Boff
90 %
10 %
−
I
C
(100 %)
−
I
C
t
d
t
on
90 %
10 %
t
r
output pulse
(idealized waveform)
t
f
t
t
s
t
off
R
C
R2
R1
DUT
mgd624
V
o
R
B
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
V
BB
V
I
V
CC