Datasheet

NXP Semiconductors
PBSS4230PANP
30 V, 2 A NPN/PNP low VCEsat (BISS) transistor
PBSS4230PANP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 14 December 2012 4 / 21
T
amb
(°C)
-75 17512525 75-25
006aad165
0.5
1.0
1.5
P
tot
(W)
0
(1)
(2)
(3) (4)
(5)
(6)
(7)
(8)
(1) 4-layer PCB 70 µm, mounting pad for collector 1 cm
2
(2) FR4 PCB 70 µm, mounting pad for collector 1 cm
2
(3) 4-layer PCB 70 µm, standard footprint
(4) 4-layer PCB 35 µm, mounting pad for collector 1 cm
2
(5) FR4 PCB 35 µm, mounting pad for collector 1 cm
2
(6) 4-layer PCB 35 µm, standard footprint
(7) FR4 PCB 70 µm, standard footprint
(8) FR4 PCB 35 µm, standard footprint
Fig. 1. Per transistor: power derating curves
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
[1] - - 338 K/W
[2] - - 219 K/W
[3] - - 236 K/W
[4] - - 179 K/W
[5] - - 278 K/W
[6] - - 164 K/W
[7] - - 179 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
[8] - - 86 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
- - 30 K/W