Datasheet

NXP Semiconductors
PBSS4230PANP
30 V, 2 A NPN/PNP low VCEsat (BISS) transistor
PBSS4230PANP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 14 December 2012 15 / 21
006aad200
-10
-1
-10
-2
-1
V
CEsat
(V)
-10
-3
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 22. TR2 (PNP): Collector-emitter saturation voltage
as a function of collector current; typical values
006aad201
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
-10
-2
-10
-1
-1
-10
V
CEsat
(V)
-10
-3
(1)
(2)
(3)
T
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig. 23. TR2 (PNP): Collector-emitter saturation voltage
as a function of collector current; typical values
006aad202
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
1
10
10
2
10
3
R
CEsat
(Ω)
10
-1
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 24. TR2 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
006aad203
1
10
-1
10
2
10
10
3
R
CEsat
(Ω)
10
-2
(1)
(2)
(3)
T
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig. 25. TR2 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values