DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS3540M 40 V, 0.
Philips Semiconductors Product specification 40 V, 0.5 A PNP low VCEsat (BISS) transistor PBSS3540M FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat SYMBOL • High collector current capability IC and ICM VCEO collector-emitter voltage −40 V IC collector current (DC) −500 mA ICM peak collector current −1 A RCEsat equivalent on-resistance <700 mΩ • High efficiency leading to reduced heat generation • Reduced printed-circuit board requirements.
Philips Semiconductors Product specification 40 V, 0.5 A PNP low VCEsat (BISS) transistor PBSS3540M LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX.
Philips Semiconductors Product specification 40 V, 0.5 A PNP low VCEsat (BISS) transistor PBSS3540M CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX.
Philips Semiconductors Product specification 40 V, 0.5 A PNP low VCEsat (BISS) transistor PBSS3540M MLE202 800 MLE203 −1200 handbook, halfpage handbook, halfpage hFE VBE (mV) (1) 600 (1) −800 (2) (2) 400 −400 (3) (3) 200 0 −10−1 −1 −10 −102 IC (mA) 0 −10−1 −103 VCE = −2 V. VCE = −2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values.
Philips Semiconductors Product specification 40 V, 0.5 A PNP low VCEsat (BISS) transistor PBSS3540M MLE200 −1200 MLE201 103 handbook, halfpage handbook, halfpage RCEsat IC (Ω) (mA) (1) −800 (3) (2) (4) (5) (6) (7) 102 (8) 10 (9) (10) −400 (1) 1 (2) 0 −1 0 −2 −3 −4 10−1 −10−1 −5 VCE (V) Tamb = 25 °C. (1) (2) (3) (4) IB = −40 mA. IB = −36 mA. IB = −32 mA. IB = −28 mA. IB = −24 mA. IB = −20 mA. IB = −16 mA. IB = −12 mA. (9) IB = −8 mA. (10) IB = −4 mA.
Philips Semiconductors Product specification 40 V, 0.5 A PNP low VCEsat (BISS) transistor PBSS3540M PACKAGE OUTLINE Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm L SOT883 L1 2 b 3 e b1 1 e1 A A1 E D 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) A1 max. b b1 D E e e1 L L1 mm 0.50 0.46 0.03 0.20 0.12 0.55 0.47 0.62 0.55 1.02 0.95 0.35 0.65 0.30 0.22 0.30 0.22 Note 1.
Philips Semiconductors Product specification 40 V, 0.5 A PNP low VCEsat (BISS) transistor PBSS3540M DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date.
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