Datasheet

PBSS2515MB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 26 January 2012 3 of 12
NXP Semiconductors
PBSS2515MB
15 V, 0.5 A NPN low VCEsat (BISS) transistor
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 15 V
V
CEO
collector-emitter voltage open base - 15 V
V
EBO
emitter-base voltage open collector - 6 V
I
C
collector current - 500 mA
I
CM
peak collector current single pulse; t
p
≤ 1ms - 1 A
I
BM
peak base current single pulse; t
p
≤ 1 ms - 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C
[1][2]
- 250 mW
[3][2]
- 590 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C