Datasheet

2001 Jan 18 6
Philips Semiconductors Preliminary specification
UHF wideband transistor PBR941B
handbook, halfpage
01020 40
gain
(dB)
G
UM
MSG
20
0
16
MGS500
30
12
8
4
I
C
(mA)
G
max
Fig.6 Gain as a function of collector current;
typical values.
f=1GHz; V
CE
=6V.
G
UM
= maximum unilateral power gain.
MSG = maximum stable gain.
G
max
= maximum available gain.
handbook, halfpage
50
0
MGS501
10
2
10
3
10
4
10
20
30
40
gain
(dB)
f (MHz)
G
UM
MSG
G
max
Fig.7 Gain as a function of frequency; typical
values.
I
C
=5mA; V
CE
=6V.
G
UM
= maximum unilateral power gain.
MSG = maximum stable gain.
G
max
= maximum available gain.
handbook, halfpage
50
0
MGR502
10
2
10
3
10
4
10
20
30
40
gain
(dB)
f (MHz)
G
UM
MSG
G
max
Fig.8 Gain as a function of frequency; typical
values.
I
C
=15mA; V
CE
=6V.
G
UM
= maximum unilateral power gain.
MSG = maximum stable gain.
G
max
= maximum available gain.
handbook, halfpage
50
0
MGS503
10
2
10
3
10
4
10
20
30
40
gain
(dB)
f (MHz)
G
UM
MSG
G
max
Fig.9 Gain as a function of frequency; typical
values.
I
C
=30 mA; V
CE
=6V.
G
UM
= maximum unilateral power gain.
MSG = maximum stable gain.
G
max
= maximum available gain.