Datasheet

PBLS4004Y_PBLS4004V_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 16 February 2009 4 of 11
NXP Semiconductors
PBLS4004Y; PBLS4004V
40 V PNP BISS loadswitch
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
Table 8. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
TR1; PNP low V
CEsat
transistor
I
CBO
collector-base cut-off
current
V
CB
= −40 V; I
E
=0A - - −100 nA
V
CB
= −40 V; I
E
=0A;
T
j
= 150 °C
--−50 µA
I
EBO
emitter-base cut-off
current
V
EB
= −5 V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −2 V; I
C
= −10 mA 200 - -
V
CE
= −2 V; I
C
= −100 mA
[1]
150 - -
V
CE
= −2 V; I
C
= −500 mA
[1]
40 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= −10 mA; I
B
= −0.5 mA - - −50 mV
I
C
= −100 mA; I
B
= −5mA - - −130 mV
I
C
= −200 mA; I
B
= −10 mA - - −200 mV
I
C
= −500 mA; I
B
= −50 mA
[1]
--−350 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −500 mA; I
B
= −50 mA
[1]
- 440 700 mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −500 mA; I
B
= −50 mA
[1]
--−1.2 V
V
BEon
base-emitter
turn-on voltage
V
CE
= −2 V; I
C
= −100 mA
[1]
--−1.1 V
f
T
transition frequency I
C
= −100 mA; V
CE
= −5V;
f = 100 MHz
100 300 - MHz
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
--10pF
TR2; NPN resistor-equipped transistor
I
CBO
collector-base cut-off
current
V
CB
=50V; I
E
= 0 A - - 100 nA
I
CEO
collector-emitter
cut-off current
V
CE
=30V; I
B
=0A --1µA
V
CE
=30V; I
B
=0A;
T
j
= 150 °C
--50µA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
= 0 A - - 180 µA
h
FE
DC current gain V
CE
=5V; I
C
= 5 mA 60 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA - - 150 mV
V
I(off)
off-state input voltage V
CE
=5V; I
C
= 100 µA - 1.1 0.8 V
V
I(on)
on-state input voltage V
CE
= 0.3 V; I
C
= 5 mA 2.5 1.7 - V
R1 bias resistor 1 (input) 15.4 22 28.6 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
- - 2.5 pF