Datasheet

BTA316X_SER_B_C_E_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 11 April 2007 2 of 13
NXP Semiconductors
BTA316X series B, C and E
16 A Three-quadrant triacs high commutation
3. Ordering information
4. Limiting values
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/µs.
Table 2. Ordering information
Type number Package
Name Description Version
BTA316X-600B TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole;
3-lead TO-220 ‘full pack’
SOT186A
BTA316X-600C
BTA316X-600E
BTA316X-800B
BTA316X-800C
BTA316X-800E
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state voltage BTA316X-600B; BTA316X-600C;
BTA316X-600E
[1]
- 600 V
BTA316X-800B; BTA316X-800C;
BTA316X-800E
- 800 V
I
T(RMS)
RMS on-state current full sine wave; T
h
≤ 45 °C; see
Figure 4 and 5
-16A
I
TSM
non-repetitive peak on-state current full sine wave; T
j
=25°C prior to
surge; see
Figure 2 and 3
t = 20 ms - 140 A
t = 16.7 ms - 150 A
I
2
tI
2
t for fusing t = 10 ms - 98 A
2
s
dI
T
/dt rate of rise of on-state current I
TM
= 20 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
- 100 A/µs
I
GM
peak gate current - 2 A
P
GM
peak gate power - 5 W
P
G(AV)
average gate power over any 20 ms period - 0.5 W
T
stg
storage temperature −40 +150 °C
T
j
junction temperature - 125 °C