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BTA225B-800B

3Q Hi-Com Triac

6 August 2014 Product data sheet

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1. General description

Planar passivated high commutation three quadrant triac in a SOT404 (D2PAK) surface

mountable plastic package intended for use in circuits where high static and dynamic dV/

dt and high dI/dt can occur. This "series B" triac will commutate the full rated RMS current

at the maximum rated junction temperature without the aid of a snubber.

2. Features and benefits

•

3Q technology for improved noise immunity

•

High blocking voltage capability

•

High commutation capability with maximum false trigger immunity

•

High immunity to false turn-on by dV/dt

•

Less sensitive gate for very high noise immunity

•

Planar passivated for voltage ruggedness and reliability

•

Surface mountable package

•

Triggering in three quadrants only

3. Applications

•

Heating controls

•

High power motor control

•

High power switching

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

DRM

repetitive peak off-

state voltage

- - 800 V

TSM

non-repetitive peak on-

state current

full sine wave; T

j(init)

= 25 °C;

= 20 ms; Fig. 4; Fig. 5

- - 190 A

T(RMS)

RMS on-state current full sine wave; T

≤ 91 °C; Fig. 1;

Fig. 2; Fig. 3

- - 25 A

Static characteristics

gate trigger current V

= 12 V; I

= 0.1 A; T2+ G+;

= 25 °C; Fig. 7

2 18 50 mA

Summary of content (14 pages)

PAGE 1
D2 PA K BTA225B-800B 3Q Hi-Com Triac 6 August 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT404 (D2PAK) surface mountable plastic package intended for use in circuits where high static and dynamic dV/ dt and high dI/dt can occur. This "series B" triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. 2.
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BTA225B-800B NXP Semiconductors 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G-; 2 21 50 mA 2 34 50 mA Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb T2 mounting base; main terminal 2 mb Graphic symbol T2 sym051 T1 G 2 1 3 D2PAK (SOT404) 6.
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BTA225B-800B NXP Semiconductors 3Q Hi-Com Triac 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current full sine wave; Tmb ≤ 91 °C; Fig. 1; Min Max Unit - 800 V - 25 A - 190 A - 209 A Fig. 2; Fig. 3 ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig.
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BTA225B-800B NXP Semiconductors 3Q Hi-Com Triac 003aae173 40 Ptot (W) conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 30 20 Tmb(max) (°C) α = 180° 120° α 95 90° 60° 105 30° 115 10 0 85 0 5 10 15 20 25 125 30 IT(RMS) (A) α = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 3.
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BTA225B-800B NXP Semiconductors 3Q Hi-Com Triac 003aae171 240 ITSM (A) 200 160 120 t 40 0 ITSM IT 80 1/f Tj(init) = 25 °C max 1 10 102 103 number of cycles (n) 104 f = 50 Hz Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BTA225B-800B Product data sheet All information provided in this document is subject to legal disclaimers. 6 August 2014 © NXP Semiconductors N.V. 2014.
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BTA225B-800B NXP Semiconductors 3Q Hi-Com Triac 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base full cycle; Fig. 6 - - 1 K/W half cycle; Fig. 6 - - 1.
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BTA225B-800B NXP Semiconductors 3Q Hi-Com Triac 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G+; 2 18 50 mA 2 21 50 mA 2 34 50 mA - 31 60 mA - 34 90 mA - 30 60 mA Static characteristics IGT gate trigger current Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 IL latching current VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; Fig.
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BTA225B-800B NXP Semiconductors 3Q Hi-Com Triac 003aae177 3 003aae178 3 IL IGT IGT(25°C) IL(25°C) (1) 2 2 (2) (3) 1 0 -50 1 0 50 100 Tj (°C) 0 -50 150 (1) T2- G(2) T2+ G(3) T2+ G+ Fig. 7. Fig. 8. 0 50 100 Tj (°C) 150 Normalized holding current as a function of junction temperature Normalized gate trigger current as a function of junction temperature 003aae179 3 003aae169 80 IT (A) IH IH(25°C) 60 2 40 (1) 1 (2) (3) 20 0 -50 Fig. 9.
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BTA225B-800B NXP Semiconductors 3Q Hi-Com Triac 003aae176 1.6 dIcom/dt (A/ms) VGT VGT(25°C) 1.2 102 0.8 10 0.4 -50 003aae175 103 0 50 100 Tj (°C) 1 150 0 40 80 120 160 Tj (°C) Fig. 11. Normalized gate trigger voltage as a function of Fig. 12. Critical rate of change of commutating current junction temperature as a function of junction temperature; typical values BTA225B-800B Product data sheet All information provided in this document is subject to legal disclaimers.
PAGE 10
BTA225B-800B NXP Semiconductors 3Q Hi-Com Triac 10. Package outline Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404 A A1 E mounting base D1 D HD 2 Lp 1 3 b2 c b e e Q 0 5 mm scale Dimensions (mm are the original dimensions) Unit max nom min mm A A1 b b2 c 4.5 1.40 0.85 1.45 0.64 4.1 1.27 0.60 1.05 0.46 D D1 E 11 1.6 10.3 1.2 9.7 e 2.54 HD Lp Q 15.8 2.9 2.6 14.8 2.1 2.
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BTA225B-800B NXP Semiconductors 3Q Hi-Com Triac 11. Soldering 10.85 10.60 10.50 1.50 7.50 7.40 1.70 2.25 2.15 8.15 8.35 8.275 1.50 4.60 0.30 4.85 5.40 7.95 8.075 3.00 0.20 1.20 1.30 1.55 solder lands solder resist 5.08 msd057 occupied area solder paste Fig. 14. Reflow soldering footprint for D2PAK (SOT404) BTA225B-800B Product data sheet All information provided in this document is subject to legal disclaimers. 6 August 2014 © NXP Semiconductors N.V. 2014.
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BTA225B-800B NXP Semiconductors 3Q Hi-Com Triac In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. Legal information 12.
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BTA225B-800B NXP Semiconductors 3Q Hi-Com Triac grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.
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BTA225B-800B NXP Semiconductors 3Q Hi-Com Triac 13. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information .............................................