Datasheet

NXP Semiconductors
BT151X-800R
SCR
BT151X-800R All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 16 March 2014 2 / 12
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K cathode
2 A anode
3 G gate
mb n.c. mounting base; isolated
321
mb
TO-220F (SOT186A)
sym037
A K
G
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BT151X-800R TO-220F plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
SOT186A
BT151X-800R/DG TO-220F plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
SOT186A
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state voltage - 800 V
V
RRM
repetitive peak reverse voltage - 800 V
I
T(AV)
average on-state current half sine wave; T
h
≤ 69 °C - 7.5 A
I
T(RMS)
RMS on-state current half sine wave; T
h
≤ 69 °C; Fig. 1;
Fig. 2; Fig. 3
- 12 A
half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms; Fig. 4; Fig. 5
- 120 AI
TSM
non-repetitive peak on-state
current
half sine wave; T
j(init)
= 25 °C;
t
p
= 8.3 ms
- 132 A
I
2
t I
2
t for fusing
t
p
= 10 ms; SIN - 72
A
2
s