Datasheet

2004 Dec 13 3
NXP Semiconductors Product data sheet
PNP medium power transistors BSR30; BSR31; BSR33
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For
other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For
other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BSR30; BSR31 − −70 V
BSR33 − −90 V
V
CEO
collector-emitter voltage open base
BSR30; BSR31 − −60 V
BSR33 − −80 V
V
EBO
emitter-base voltage open collector − −5 V
I
C
collector current (DC) − −1 A
I
CM
peak collector current − −2 A
I
BM
peak base current − −200 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 1.35 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 93 K/W
R
th(j-s)
thermal resistance from junction to soldering point 13 K/W