BGA2800 MMIC wideband amplifier Rev. 4 — 8 December 2014 Product data sheet 1. Product profile 1.1 General description Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package. 1.2 Features and benefits Internally matched to 50 A gain of 20 dB at 250 MHz increasing to 20.6 dB at 2150 MHz Output power at 1 dB gain compression = 1 dBm Supply current = 10.5 mA at a supply voltage of 3.
BGA2800 NXP Semiconductors MMIC wideband amplifier 3. Ordering information Table 2. Ordering information Type number BGA2800 Package Name Description Version - plastic surface-mounted package; 6 leads SOT363 4. Marking Table 3. Marking Type number Marking code Description BGA2800 *E7 * = - : made in Hong Kong * = p : made in Hong Kong * = W : made in China * = t : made in Malaysia 5. Limiting values Table 4.
BGA2800 NXP Semiconductors MMIC wideband amplifier Table 6. Characteristics …continued VCC = 3.3 V; ZS = ZL = 50 ; Pi = 40 dBm; Tamb = 25 C; measured on demo board; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Gp f = 250 MHz 19.4 19.9 20.5 dB f = 950 MHz 19.8 20.5 21.2 dB f = 2150 MHz 18.7 20.2 21.
BGA2800 NXP Semiconductors MMIC wideband amplifier 8. Application information Figure 1 shows a typical application circuit for the BGA2800 MMIC. The device is internally matched to 50 , and therefore does not need any external matching. The value of the input and output DC blocking capacitors C2 and C3 should not be more than 100 pF for applications above 100 MHz. However, when the device is operated below 100 MHz, the capacitor value should be increased.
BGA2800 NXP Semiconductors MMIC wideband amplifier 8.2 Graphs DDP Tamb = 25 C; ICC = 10.5 mA; VCC = 3.3 V; Z0 = 50 . (1) f = 250 MHz (2) f = 950 MHz (3) f = 2150 MHz Fig 4.
BGA2800 NXP Semiconductors MMIC wideband amplifier DDP Tamb = 25 C; ICC = 10.5 mA; VCC = 3.3 V; Z0 = 50 . (1) f = 250 MHz (2) f = 950 MHz (3) f = 2150 MHz Fig 5. BGA2800 Product data sheet Output reflection coefficient (S22); typical values All information provided in this document is subject to legal disclaimers. Rev.
BGA2800 NXP Semiconductors MMIC wideband amplifier DDP . DDP 5/LQ G% I *+] I *+] (1) VCC = 3.0 V; Tamb = 85 C; ICC = 8.80 mA (1) VCC = 3.0 V; Tamb = 85 C; ICC = 8.80 mA Pdrive = 40 dBm; Z0 = 50 . Pdrive = 40 dBm; Z0 = 50 . (2) VCC = 3.0 V; Tamb = 40 C; ICC = 9.18 mA (2) VCC = 3.0 V; Tamb = 40 C; ICC = 9.18 mA (3) VCC = 3.3 V; Tamb = 25 C; ICC = 10.
BGA2800 NXP Semiconductors MMIC wideband amplifier DDP DDP *S G% 5/RXW G% I *+] I *+] (1) VCC = 3.0 V; Tamb = 85 C; ICC = 8.80 mA (1) VCC = 3.0 V; Tamb = 85 C; ICC = 8.80 mA Pdrive = 40 dBm; Z0 = 50 . Pdrive = 40 dBm; Z0 = 50 . (2) VCC = 3.0 V; Tamb = 40 C; ICC = 9.18 mA (2) VCC = 3.0 V; Tamb = 40 C; ICC = 9.18 mA (3) VCC = 3.3 V; Tamb = 25 C; ICC = 10.
BGA2800 NXP Semiconductors MMIC wideband amplifier DDP ,6/ G% DDP 1) G% I *+] I *+] (1) VCC = 3.0 V; Tamb = 85 C; ICC = 8.80 mA (1) VCC = 3.0 V; Tamb = 85 C; ICC = 8.80 mA Pdrive = 40 dBm; Z0 = 50 . Z0 = 50 . (2) VCC = 3.0 V; Tamb = 40 C; ICC = 9.18 mA (2) VCC = 3.0 V; Tamb = 40 C; ICC = 9.18 mA (3) VCC = 3.3 V; Tamb = 25 C; ICC = 10.52 mA (3) VCC = 3.
BGA2800 NXP Semiconductors MMIC wideband amplifier Table 9. Input power at 1 dB gain compression over temperature and supply voltages Typical values. Symbol Parameter Pi(1dB) Conditions input power at 1 dB gain compression Tamb (C) Unit 40 +25 +85 VCC = 3.0 V 21 21 21 dBm VCC = 3.3 V 20 20 20 dBm VCC = 3.6 V 20 20 20 dBm VCC = 3.0 V 21 21 21 dBm VCC = 3.3 V 20 20 20 dBm VCC = 3.6 V 20 20 20 dBm VCC = 3.0 V 21 21 22 dBm VCC = 3.
BGA2800 NXP Semiconductors MMIC wideband amplifier Table 11. Saturated output power over temperature and supply voltages Typical values. Symbol Parameter Conditions PL(sat) saturated output power f = 250 MHz Tamb (C) Unit 40 +25 +85 VCC = 3.0 V 1 1 1 dBm VCC = 3.3 V 1 1 1 dBm VCC = 3.6 V 2 2 2 dBm VCC = 3.0 V 1 1 1 dBm VCC = 3.3 V 2 1 1 dBm VCC = 3.6 V 3 2 2 dBm VCC = 3.0 V 1 1 3 dBm VCC = 3.3 V 1 0 2 dBm VCC = 3.
BGA2800 NXP Semiconductors MMIC wideband amplifier Table 13. Output third-order intercept point over temperature and supply voltages Typical values. Symbol Parameter Conditions IP3O output third-order intercept point f1 = 250 MHz; f2 = 251 MHz; Pdrive = 36 dBm Tamb (C) Unit 40 +25 +85 VCC = 3.0 V 9 9 8 dBm VCC = 3.3 V 12 11 10 dBm VCC = 3.6 V 14 12 11 dBm VCC = 3.0 V 10 9 8 dBm VCC = 3.3 V 12 11 10 dBm VCC = 3.
BGA2800 NXP Semiconductors MMIC wideband amplifier 9. Test information PP ,& PP & & & DDO True size = 30 mm 30 mm. Fig 12. PCB layout and demo board with components Table 15.
BGA2800 NXP Semiconductors MMIC wideband amplifier 10.
BGA2800 NXP Semiconductors MMIC wideband amplifier 11. Abbreviations Table 16. Abbreviations Acronym Description IF Intermediate Frequency LNA Low-Noise Amplifier LNB Low-Noise Block converter PCB Printed-Circuit Board SMD Surface Mounted Device 12. Revision history Table 17. Revision history Document ID Release date Data sheet status Change notice Supersedes BGA2800 v.4 20141208 Product data sheet - BGA2800 v.3 Modifications • Table 4 on page 2: max. value VCC changed to 5.
BGA2800 NXP Semiconductors MMIC wideband amplifier 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
BGA2800 NXP Semiconductors MMIC wideband amplifier Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use.
BGA2800 NXP Semiconductors MMIC wideband amplifier 15. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 8 8.1 8.2 8.3 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . .