Datasheet

BFU530X All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 5 March 2014 15 of 22
NXP Semiconductors
BFU530X
NPN wideband silicon RF transistor
10. Application information
More information about the following application example can be found in the application
notes. See Section 5 “
Design support”.
The following application example can be implemented using the evaluation kit. See
Section 3 “
Ordering information” for the order type number.
The following application example can be simulated using the simulation package. See
Section 5 “
Design support”.
V
CE
= 8 V; 400 MHz  f  2 GHz.
(1) I
C
=1mA
(2) I
C
=2mA
(3) I
C
=3mA
(4) I
C
=5mA
(5) I
C
=10mA
(6) I
C
=15mA
(7) I
C
=20mA
(8) I
C
=25mA
Fig 24. Optimum reflection coefficient (
opt
); typical values
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