DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification December 1997
NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose amplifiers in thick and thin-film circuits. handbook, halfpage 3 g PINNING 1 1 = drain d s 2 Top view MAM385 2 = source 3 = gate Note : Drain and source are interchangeable. Fig.1 Simplified outline and symbol, SOT23.
NXP Semiconductors Product specification N-channel silicon FET BFT46 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) VDS max. 25 V VDGO max. 25 V Gate-source voltage (open drain) VGSO max. 25 V Drain current ID max. 10 mA IG max. 5 mA Ptot max. 250 mW Drain-source voltage Drain-gate voltage (open source) Gate current Total power dissipation up to Tamb = 40 C(1) 65 to 150 C Storage temperature range Tstg Junction temperature Tj max.
NXP Semiconductors Product specification N-channel silicon FET BFT46 MDA245 300 handbook, halfpage Ptot (mW) 200 100 0 40 0 80 120 200 160 Tamb (°C) Fig.2 Power derating curve. MDA272 1.5 ID handbook, full pagewidth (mA) 1.25 1 0.75 VGS = 0 V max 0.5 − 0.1 V typ 0.25 − 0.2 V − 0.3 V min 0 −1.25 − 0.4 V VGS (V) −1 −0.75 −0.5 −0.25 0 5 Fig.3 Typical values. VDS = 10 V; Tj = 25 C.
NXP Semiconductors Product specification N-channel silicon FET BFT46 MDA273 1 MDA274 1.25 −V(P)GS (V) at ID = 0.5 nA 1 handbook, halfpage handbook, halfpage ID (mA) − VGS = 0 V 0.75 0.1 V typ 0.5 0.75 0.2 V 0.3 V 0.5 0.25 0.25 0 0 50 100 Tj (°C) 0 150 Fig.4 Typical values. VDS = 10 V. 1 1.5 IDSS (mA) at VGS = 0 0.5 Correlation between V(P)GS and IDSS. VDS = 10 V; Tj = 25 C. Fig.
NXP Semiconductors Product specification N-channel silicon FET BFT46 MDA271 103 handbook, halfpage |yos| (μA/V) Cis (pF) 102 4 typ 10 1 0 2 10 20 VDS (V) 0 30 0 yos versus VDS. ID = 0,4 mA; f = 1 kHz; Tamb = 25 C. Fig.8 MDA266 6 handbook, halfpage −2 −3 VGS (V) −4 Fig.9 Typical values. VDS = 10 V; Tamb = 25 C. MDA267 1.5 −1 MDA268 10 handbook, halfpage handbook, halfpage IGSS Crs (pF) (nA) 1 1 typ 10−1 0.5 10−2 0 0 −1 −2 −3 VGS (V) 10−3 −4 Fig.
NXP Semiconductors Product specification N-channel silicon FET BFT46 MDA264 104 handbook, full pagewidth en (nV/ Hz) 103 102 typ 10 1 10 102 103 104 105 f (Hz) 106 Fig.12 VDS = 10 V; ID = 0,2 mA; Tamb = 25 C. MDA265 104 handbook, full pagewidth in (fA/ Hz) 103 102 10 1 10 typ 102 103 104 Fig.13 VDS = 10 V; ID = 0,2 mA; Tamb = 25 C.
NXP Semiconductors Product specification N-channel silicon FET BFT46 PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
NXP Semiconductors Product specification N-channel silicon FET BFT46 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Product specification N-channel silicon FET BFT46 Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s).
NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version.
