Datasheet

BFT25A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 5 — 12 September 2011 3 of 15
NXP Semiconductors
BFT25A
NPN 5 GHz wideband transistor
6. Thermal characteristics
[1] T
s
is the temperature at the soldering point of the collector tab.
7. Characteristics
[1] G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-s)
from junction to soldering point
[1]
260 K/W
Table 7. Characteristics
T
j
= 25  C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector cut-off
current
I
E
= 0 A; V
CB
= 5 V - - 50 nA
h
FE
DC current gain I
C
= 0.5 mA; V
CE
= 1 V 50 80 200
f
T
transition
frequency
I
C
= 1 mA; V
CE
= 1 V;
T
amb
= 25 C;
f = 500 MHz
3.5 5 - GHz
C
re
feedback
capacitance
I
C
=i
c
=0A; V
CB
=1 V;
f= 1 MHz
- 0.3 0.45 pF
G
UM
maximum
unilateral power
gain
I
C
= 0.5 mA; V
CE
= 1 V;
T
amb
= 25 C; f = 1 GHz
[1]
-15-dB
F noise figure  = 
opt
; I
C
= 0.5 mA;
V
CE
= 1 V;
T
amb
=25C; f = 1 GHz
-1.8-dB
 = 
opt
; I
C
= 1 mA;
V
CE
= 1 V;
T
amb
=25C; f = 1 GHz
-2-dB
G
UM
10 log
S
21
2
1S
11
2
–1S
22
2
–
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dB=