Datasheet

NXP Semiconductors Product specification
NPN 4 GHz wideband transistor BFQ18A
THERMAL RESISTANCE
Note
1. T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
Note
1. I
c
= 80 mA; V
CE
= 10 V; R
L
=75Ω;
V
p
=V
o
= 700 mV; f
p
=795.25 MHz;
V
q
=V
o
−6 dB; f
q
= 803.25 MHz;
V
r
=V
o
−6 dB; f
r
= 805.25 MHz;
measured at f
(p+q-r)
= 793.25 MHz.
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
R
th j-s
thermal resistance from junction to
soldering point
up to T
s
= 155 °C (note 1) 20 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. UNIT
h
FE
DC current gain I
C
= 100 mA; V
CE
= 10 V 25 −
C
c
collector capacitance I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz − 2pF
C
e
emitter capacitance I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz − 11 pF
C
re
feedback capacitance I
C
= 0; V
CE
= 10 V; f = 10.7 MHz − 1.2 pF
f
T
transition frequency I
C
= 100 mA; V
CE
= 10 V; f = 500 MHz − 4 GHz
d
im
intermodulation distortion (see Fig.2) note 1 −−60 dB
Rev. 03 - 28 September 2007
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