Datasheet

2003 Sep 09 2
NXP Semiconductors Product data sheet
NPN high-voltage transistor BF820W
FEATURES
• Low current (max. 50 mA)
• High voltage (max. 300 V).
APPLICATIONS
• Telephony and professional communication equipment.
DESCRIPTION
NPN high-voltage transistor in a SOT323 plastic package.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT323) and symbol.
handbook, halfpage
2
3
1
MAM062
3
2
1
Top view
MARKING
Notes
1. * = p : made in Hong Kong.
* = t : made in Malaysia.
* = W : made in China.
TYPE NUMBER MARKING CODE
(1)
BF820W 1V*
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 300 V
V
CEO
collector-emitter voltage open base − 300 V
I
CM
peak collector current − 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C − 200 mW
h
FE
DC current gain I
C
= 25 mA; V
CE
= 20 V 50 −
C
re
feedback capacitance I
C
= i
c
= 0; V
CB
= 30 V; f = 1 MHz − 1.6 pF
f
T
transition frequency I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz 60 − MHz