Datasheet

BCP55_BCX55_BC55PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 8 — 24 October 2011 4 of 22
NXP Semiconductors
BCP55; BCX55; BC55PA
60 V, 1 A NPN medium power transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm
2
.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 60 V
V
CEO
collector-emitter voltage open base - 60 V
V
EBO
emitter-base voltage open collector - 5 V
I
C
collector current - 1 A
I
CM
peak collector current single pulse;
t
p
 1ms
-2A
I
B
base current - 0.3 A
I
BM
peak base current single pulse;
t
p
 1ms
-0.3A
P
tot
total power dissipation T
amb
 25 C
BCP55
[1]
-0.65W
[2]
-1.00W
[3]
-1.35W
BCX55
[1]
-0.50W
[2]
-0.95W
[3]
-1.35W
BC55PA
[1]
-0.42W
[2]
-0.83W
[3]
-1.10W
[4]
-0.81W
[5]
-1.65W
T
j
junction temperature - 150 C
T
amb
ambient temperature 55 +150 C
T
stg
storage temperature 65 +150 C