Datasheet

BCM847BV_BS_DS_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 28 August 2009 5 of 15
NXP Semiconductors
BCM847BV/BS/DS
NPN/NPN matched double transistors
[1] V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
[2] V
BE
decreases by about 2 mV/K with increasing temperature.
[3] The smaller of the two values is taken as the numerator.
[4] The smaller of the two values is subtracted from the larger value.
f
T
transition frequency V
CE
=5V;
I
C
=10mA;
f = 100 MHz
100 250 - MHz
NF noise figure V
CE
=5V;
I
C
= 0.2 mA;
R
S
=2kΩ;
f = 10 Hz to
15.7 kHz
- 2.8 - dB
V
CE
=5V;
I
C
= 0.2 mA;
R
S
=2kΩ;
f = 1 kHz;
B = 200 Hz
- 3.3 - dB
Per device
h
FE1
/h
FE2
h
FE
matching V
CE
=5V;
I
C
=2mA
[3]
0.9 1 -
V
BE1
−V
BE2
V
BE
matching V
CE
=5V;
I
C
=2mA
[4]
--2mV
Table 8. Characteristics
…continued
T
amb
=25 ° C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit