Datasheet

BCP69_BC869_BC69PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 12 October 2011 14 of 24
NXP Semiconductors
BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
V
CE
= 1V
(1) T
amb
= 100 C
(2) T
amb
=25C
(3) T
amb
= 55 C
T
amb
=25C
Fig 15. h
FE
selection -16: DC current gain as a
function of collector current; typical values
Fig 16. h
FE
selection -16: collector current as a
function of collector-emitter voltage; typical
values
V
CE
= 1V
(1) T
amb
= 55 C
(2) T
amb
=25C
(3) T
amb
= 100 C
I
C
/I
B
=10
(1) T
amb
= 100 C
(2) T
amb
=25C
(3) T
amb
= 55 C
Fig 17. h
FE
selection -16: base-emitter voltage as a
function of collector current; typical values
Fig 18. h
FE
selection -16: collector-emitter saturation
voltage as a function of collector current;
typical values
006aac697
100
200
300
h
FE
0
I
C
(A)
-10
-4
-10-1-10
-3
-10
-1
-10
-2
(1)
(2)
(3)
006aab403
0
I
C
(A)
V
CE
(V)
−2.4
−1.6
−2.0
−0.8
−1.2
−0.4
0
−1 −5
−2 −3 −4
I
B
(mA) = −18.0
−16.2
−3.6
−5.4
−7.2
−9.0
−14.4
−12.6
−10.8
−1.8
006aac698
-0.4
-0.8
-1.2
V
BE
(V)
0.0
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
(1)
(2)
(3)
006aac699
-10
-1
-10
-2
-1
V
CEsat
(V)
-10
-3
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
(1)
(2)
(3)