Datasheet

BC817_BC817W_BC337_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 17 November 2009 5 of 19
NXP Semiconductors
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
[2] V
BE
decreases by approximately 2 mV/K with increasing temperature.
Table 8. Characteristics
T
amb
= 25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off current I
E
= 0 A; V
CB
= 20 V - - 100 nA
I
E
= 0 A; V
CB
= 20 V;
T
j
=150°C
--5μA
I
EBO
emitter-base cut-off current I
C
= 0 A; V
EB
= 5 V - - 100 nA
h
FE
DC current gain I
C
= 100 mA; V
CE
= 1 V
[1]
BC817; BC817W; BC337 100 - 600
BC817-16; BC817-16W;
BC337-16
100 - 250
BC817-25; BC817-25W;
BC337-25
160 - 400
BC817-40; BC817-40W;
BC337-40
250 - 600
h
FE
DC current gain I
C
= 500 mA; V
CE
= 1 V
[1]
40 - -
V
CEsat
collector-emitter saturation
voltage
I
C
= 500 mA; I
B
= 50 mA
[1]
--700mV
V
BE
base-emitter voltage I
C
= 500 mA; V
CE
= 1 V
[2]
--1.2V
C
c
collector capacitance I
E
= i
e
= 0 A; V
CB
= 10 V;
f=1MHz
-3-pF
f
T
transition frequency I
C
= 10 mA; V
CE
= 5 V;
f=100MHz
100 - - MHz