Datasheet

ISD5100 SERIES
Publication Release Date: Oct 31, 2008
- 80 - Revision 1.42
11.5. ISD5116 DIE INFORMATION
≈
ISD5116
≈
V
SSA
MIC +
MIC -
ANA OUT +
ANA OUT -
ACAP
SP -
V
SSA
[2]
SP +
V
CCA
[2]
ANA IN
AUX IN
AUX OUT
V
SSD
V
SSD
A0
SDA
A1
SCL
V
CCD
XCLK
RAC
V
SSA
INT
V
CCD
ISD5116 Device
Die Dimensions
X: 4125 µm
Y: 8030 µm
Die Thickness
[3]
292.1 µm ± 12.7 µm
Pad Opening
Single pad: 90 x 90 µm
Double pad: 180 x 90 µm
Notes
1. The backside of die is internally connected to Vss. It MUST NOT be connected to any other potential or
damage may occur.
2. Double bond recommended, if treated as single doubled-pad.
3. This figure reflects the current die thickness. Please contact Nuvoton as this thickness may change in the
future.