Datasheet

MAX5955/MAX5956
Low-Voltage, Dual Hot-Swap Controllers with
Independent On/Off Control
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(V
IN_
= +1V to +13.2V provided at least one supply is higher than +2.7V, V
ON1
= V
ON2
= +2.7V, T
A
= T
MIN
to T
MAX
, unless otherwise
noted. Typical values are at V
IN1
= +5V, V
IN2
= +3.3V, and T
A
= +25°C.) (Note 1)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
IN_ to GND...........................................................................+14V
GATE_ to GND ...........................................-0.3V to (V
IN_
+ 6.2V)
ON_, PGOOD_, TIM to GND.......................-0.3V to the higher of
(V
IN1
+ 0.3V) and (V
IN2
+ 0.3V)
SENSE_, MON_, LIM_ to GND ...................-0.3V to (V
IN_
+ 0.3V)
Current into Any Pin .........................................................±50mA
Continuous Power Dissipation (T
A
= +70°C)
16-Pin QSOP (derate 8.3mW/°C above +70°C)...........667mW
Operating Temperature Range
MAX59_ _ _U_ _...................................................0°C to +85°C
MAX59_ _ _E_ _ ................................................-40°C to +85°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
POWER SUPPLIES
IN_ Input Voltage Range V
IN
Other V
IN
≥ +2.7V 1.0 13.2 V
Supply Current I
IN
I
IN1
+ I
IN2
, V
IN1
= +5V, V
IN2
= +3.3V 1.2 2.3 mA
CURRENT CONTROL
T
A
= +25°C 22.5 25 27.5
LIM = GND
T
A
= -40°C to +85°C 20.5 27.5
Slow-Comparator Threshold
(V
IN
_ - V
SENSE
_) (Note 2)
V
SC,TH
R
LIM
= 300kΩ 80 100 130
mV
1mV overdrive 3 ms
Slow-Comparator Response Time
(Note 3)
t
SCD
10mV overdrive 110 µs
V
SU,TH
During startup 2 x V
SC
,
TH
Fast-Comparator Threshold
(V
IN
_ - V
SENSE
_)
V
FC,TH
V
IN
_ - V
SENSE
_; normal operation 4 x V
SC
,
TH
mV
Fast-Comparator Response Time
(V
IN
_ - V
SENSE
_)
t
FCD
10mV overdrive, from overload condition 260 ns
SENSE Input Bias Current I
B SENSE
V
SENSE
_ = V
IN
_ 0.03 1 µA
MOSFET DRIVER
R
TI M
= 100kΩ 6 10.8 16
R
TIM
= 4kΩ (minimum value) 0.31 0.45 0.58
Startup Period (Note 4) t
START
TIM floating 4 9 17
ms
C har g i ng , V
GATE
_ = + 5V , V
IN
_ = + 10V ( N ote 5) 65 100 130 µA
Average Gate Current I
GATE
Discharging, triggered by a fault or when
V
ON_
< 0.875V
3mA
V
IN
_ = 3V to 13.2V 4.8 5.4 6.0
Gate-Drive Voltage V
DRIVE
V
GATE_
- V
IN
_,
I
GATE_
< 1µA
V
IN
_ = 2.7V to 3.0V 4.1 5.0 6.0
V
ON_ COMPARATOR
Low to high 0.85 0.875 0.90 V
ON_ Threshold V
ON_
,
TH
Hysteresis 25 mV
ON_ Propagation Delay 10mV overdrive 50 µs