Datasheet

MAX5079
ORing MOSFET Controller with
Ultra-Fast 200ns Turn-Off
_______________________________________________________________________________________ 3
ELECTRICAL CHARACTERISTICS (continued)
((V
IN
= 2.75V to 13.2V and V
AUXIN
= 0V) or (V
IN
= 1V and V
AUXIN
= 2.75V to 13.2V), R
STH
= open, R
FTH
= 0, V
UVLO
= 1V, V
OVI
= 0V,
T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at V
IN
= 12V and T
A
= +25°C. See the Typical Operating Circuit .) (Note 1)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
ORing MOSFET CONTROL
ORing MOSFET Turn-On Time t
ON
C
GATE
= 10nF, C
EXT
= 100nF,
MOSFET gate threshold = 2V
10 25 µs
ORing MOSFET Forward Voltage
Threshold (Fast Comparator)
V
DTH
(V
IN
- V
BUS
) rising, V
AUXIN
≥ 2.75V 5 12.5 20 mV
R
FTH
= 0 -12 -24 -31
R
FTH
= 12kΩ -63 -104 -150
ORing MOSFET Reverse Voltage
Turn-Off Threshold (Fast
Comparator (V
IN
- V
BUS
))
V
FTH
R
FTH
= 27kΩ, V
IN
≥
V
AUXIN
≥
2.75V
-126 -204 -300
mV
ORing MOSFET Reverse Voltage
Blanking Time (Fast Comparator)
t
FBL
V
BUS
= 2.8V, R
FTH
= 0,
V
BUS
- V
IN
= 0.3V
50 ns
Slow-Comparator Output Voltage
Threshold on STH
V
O_STH
V
IN
≥ 2.75V 0.95 1 1.05 V
R
STH
open -0.1 -12 -24.0
R
STH
= 500kΩ -25
ORing MOSFET Reverse Voltage
Turn-Off Threshold (Slow
Comparator (V
IN
- V
BUS
))
V
STH
R
STH
= 64kΩ -100
mV
(V
IN
- V
BUS
) to I
STH
Transconductance (Slow
Comparator)
G
M_STH
V
STH
= 0V 0.17 mS
STH floating 0.5 0.9 1.5
C
STH
= 0.047µF 5
ORing MOSFET Reverse Voltage
Blanking Time (Slow
Comparator)
t
SBL
C
STH
= 0.22µF 14
ms
ORing MOSFET DRIVER
Gate-Charge Current I
GATE
C
EXT
= 100nF, V
IN
≥ 2.75V 0.7 2 mA
V
GATE
= V
IN
, V
IN
= 5.1V, V
BUS
= 5V;
V
OUT
= 1V
0.9 2 6.8
V
GATE
≥ V
IN
, V
IN
= 2.75V, V
BUS
= 3.5V 1.3
Gate Discharge Current (Note 3) I
GATE.DIS_MIN
V
GATE
≥ V
IN
, V
IN
= 12V, V
BUS
= 13.2V 3.2
A
V
BUS
= 3.5V, C
GATE
= 0.1µF 600
Gate Fall Time t
FGATE
V
BUS
= 3.5V, C
GATE
= 0.01µF 200
ns
Gate Discharge Current Delay
Time (Time from V
IN
Falling from
3.7V to 3V to V
GATE
= V
IN
)
t
DIS_GATE
V
BUS
= 3.5V 70 200 ns
Gate to IN Resistance R
GATE_IN
(V
GATE
- V
IN
) = 100mV; V
IN
≥ 2.75V 900 Ω
Gate to IN Clamp Voltage V
GAT E _ IN _ C L AM P
I
GATE
= 10mA, V
IN
≥ V
BUS
8.5 11 V
2.7V < V
IN
< 13.2V 3.8
V
IN
= 13.2V 6.5 7 7.7
Gate-Drive Voltage (Measured
with Respect to V
IN
)
(V
GATE
- V
IN
)
V
IN
= 2.75V 4.5 5 5.5
V
V
IN
Switchover Threshold to
Higher GATE Voltage (Note 4)
V
IN_SOTH+
7.4 8 8.5 V