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MAX5062/MAX5063/MAX5064
125V/2A, High-Speed,
Half-Bridge MOSFET Drivers
_______________________________________________________________________________________ 3
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= V
BST
= +8V to +12.6V, V
HS
= GND = 0V, BBM = open, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are at
V
DD
= V
BST
= +12V and T
A
= +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX
UNITS
V
IN_H+
, V
IN_L+
= 0V
V
IN_L
= V
DD
for MAX5062B/D, MAX5063B/D
V
IN_H-
, V
IN_L-
, V
IN_H
= V
DD
Logic-Input Current I_IN
V
IN_L
= 0V for MAX5062A/C, MAX5063A/C
-1
0.001
+1 µA
IN_H+, IN_L+ IN_H, to GND
IN_L to V
DD
for MAX5062B/D,
MAX5063B/D
IN_H-, IN_L-, IN_H, to V
DD
Input Resistance R
IN
IN_L for MAX5062A/C, MAX5063A/C to GND
1MΩ
Input Capacitance C
IN
2.5 pF
HIGH-SIDE GATE DRIVER
HS Maximum Voltage
V
HS_MAX
125
V
BST Maximum Voltage
V
BST_MAX
140
V
T
A
= +25°C 2.5 3.3
Driver Output Resistance
(Sourcing)
R
ON_HP
V
DD
= 12V, I
DH
= 100mA
(sourcing)
T
A
= +125°C 3.5 4.6
Ω
T
A
= +25°C 2.1 2.8
Driver Output Resistance
(Sinking)
R
ON_HN
V
DD
= 12V, I
DH
= 100mA
(sinking)
T
A
= +125°C 3.2 4.2
Ω
DH Reverse Current (Latchup
Protection)
(Note 3)
400
mA
Power-Off Pulldown Clamp
Voltage
V
BST
= 0V or floating, I
DH
= 1mA (sinking) 0.94 1.16
V
Peak Output Current (Sourcing) C
L
= 10nF, V
DH
= 0V 2 A
Peak Output Current (Sinking)
I
DH_PEAK
C
L
= 10nF, V
DH
= 12V 2 A
LOW-SIDE GATE DRIVER
T
A
= +25°C 2.5 3.3
Driver Output Resistance
(Sourcing)
R
ON_LP
V
DD
= 12V, I
DL
= 100mA
(sourcing)
T
A
= +125°C 3.5 4.6
Ω
T
A
= +25°C 2.1 2.8
Driver Output Resistance
(Sinking)
R
ON_LN
V
DD
= 12V, I
DL
= 100mA
(sinking)
T
A
= +125°C 3.2 4.2
Ω
Reverse Current at DL (Latchup
Protection)
(Note 3)
400
mA
Power-Off Pulldown Clamp
Voltage
V
DD
= 0V or floating, I
DL
= 1mA (sinking)
0.95 1.16
V
Peak Output Current (Sourcing) I
PK_LP
C
L
= 10nF, V
DL
= 0V 2 A
Peak Output Current (Sinking) I
PK_LN
C
L
= 10nF, V
DL
= 12V 2 A
Forward Voltage Drop V
f
I
BST
= 100mA
0.91 1.11
V
Turn-On and Turn-Off Time t
R
I
BST
= 100mA 40 ns