Datasheet

MAX19996A
SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer
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13
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19996A toc28
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
3180296027402520
-20
-30
-10
-50
-40
2300 3400
T
C
= -30°C
T
C
= +85°C
T
C
= +25°C
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19996A toc29
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
3180296027402520
-20
-30
-10
-50
-40
2300 3400
P
LO
= -3dBm, 0dBm, +3dBm
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19996A toc30
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
3180296027402520
-20
-30
-10
-50
-40
2300 3400
V
CC
= 4.75V
V
CC
= 5.0V
V
CC
= 5.25V
RF PORT RETURN LOSS
vs. RF FREQUENCY
MAX19996A toc31
RF FREQUENCY (MHz)
RF PORT RETURN LOSS (dB)
2800260024002200
10
20
0
40
30
2000 3000
P
LO
= -3dBm, 0dBm, +3dBm
IF PORT RETURN LOSS
vs. IF FREQUENCY
MAX19996A toc32
IF FREQUENCY (MHz)
IF PORT RETURN LOSS (dB)
410320230140
10
20
0
50
40
30
50 500
V
CC
= 4.75V, 5.0V, 5.25V
f
LO
= 2900MHz
L1, L2 = 390nH
L1, L2 = 120nH
L1, L2 = 470nH
L1, L2 = 270nH
LO PORT RETURN LOSS
vs. LO FREQUENCY
MAX19996A toc33
LO FREQUENCY (MHz)
LO PORT RETURN LOSS (dB)
345029002350
10
20
0
40
30
1800 4000
P
LO
= 0dBm
P
LO
= -3dBm
P
LO
= +3dBm
SUPPLY CURRENT
vs. TEMPERATURE (T
C
)
MAX19996A toc34
TEMPERATURE (°C)
SUPPLY CURRENT (mA)
5525-5
240
230
250
200
210
220
-35 85
V
CC
= 5.25V
V
CC
= 4.75V
V
CC
= 5.0V
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
MAX19996A toc35
LO FREQUENCY (MHz)
LO LEAKAGE AT IF PORT (dBm)
31002700 29002500
-20
-30
-10
-50
-40
2300 3300
L3 = 0Ω
L3 = 4.7nH
RF-TO-IF ISOLATION
vs. RF FREQUENCY
MAX19996A toc36
RF FREQUENCY (MHz)
RF-TO-IF ISOLATION (dB)
28002400 26002200
40
50
20
30
2000 3000
L3 = 0Ω
L3 = 4.7nH
Typical Operating Characteristics (continued)
(
Typical Application Circuit
with tuning elements outlined in Table 1, V
CC
= 5.0V, f
RF
= 2000MHz to 3000MHz, LO is high-side
injected for a 300MHz IF, P
RF
= -5dBm, P
LO
= 0dBm, T
C
= +25°C, unless otherwise noted.)