Datasheet

MAX16126/MAX16127
Load-Dump/Reverse-Voltage Protection Circuits
2Maxim Integrated
(All pins referenced to GND.)
IN ............................................................................-36V to +90V
SHDN ............................................-0.3V to max (0V, V
IN
+ 0.3V)
TERM ............................................-0.3V to max (0V, V
IN
+ 0.3V)
SRC, GATE ............................................................. -36V to +45V
SRC to GATE .......................................................... -36V to +36V
OUT .......................................................................-0.3V to +45V
FLAG .....................................................................-0.3V to +45V
OVSET, UVSET ........................................................ -0.3V to +6V
Continuous Sink/Source (all pins) ................................. Q100mA
Continuous Power Dissipation (T
A
= +70NC) (multilayer board)
TQFN (derate 14.7mW/NC above +70NC)...............1176.5mW
Operating Temperature Range ........................ -40NC to +125NC
Junction Temperature .....................................................+150NC
Storage Temperature Range ............................ -60NC to +150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC
TQFN
Junction-to-Ambient Thermal Resistance (B
JA
) ..........68NC/W
Junction-to-Case Thermal Resistance (B
JC
) ...............11NC/W
ABSOLUTE MAXIMUM RATINGS
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
ELECTRICAL CHARACTERISTICS
(V
IN
= 12V, C
GATE-SOURCE
= 1nF, T
A
= -40NC to +125NC, unless otherwise noted. Typical values are at T
A
= +25NC.) (Note 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Input Voltage Range V
IN
Operating range 3 30
V
Protection range -36 +90
Input Supply Current I
IN
SHDN = high
V
IN
= V
SRC
=
V
OUT
= 12V
224 320
FA
V
IN
= V
SRC
=
V
OUT
= 30V
260 350
SHDN = low
V
IN
= 12V 34 50
V
IN
= 30V 64 100
SRC Input Current I
SRC
V
SRC
= V
IN
= 12V, SHDN = high 136 200
FA
V
SRC
= V
IN
= 30V, SHDN = high 240 350
IN Undervoltage Lockout V
UVLO
V
IN
rising 2.92 V
OVSET/UVSET Input Current I
UVSET/OVSET
100 nA
OVSET/UVSET Threshold (Rising) V
TH
V
IN
rising 1.2 1.225 1.25 V
OVSET/UVSET Threshold Hysteresis V
TH-HYS
0.05 x
V
TH
V
POK Threshold Rising V
POK+
0.9 x V
IN
V
POK Threshold Falling V
POK-
0.87 x V
IN
V
TERM On-Resistance R
TERM
0.7 1.2 kI