Datasheet

Monolithic CMOS Analog Multiplexers
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(V+ = 15V, V- = -15V, V
GND
= 0V, T
A
= +25°C, unless otherwise noted.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Voltage Referenced to V-
V+ .....................................................................................+44V
GND ................................................................................. +25V
Digital Inputs, V
S
and V
D
(Note 1)...................-2V to (V+ + 2V)
or 20mA, whichever occurs first
Current (any terminal, except S or D) .................................30mA
Continuous Current, S or D .................................................20mA
Peak Current, S or D (pulsed at 1ms, 10% duty cycle max) ..40mA
Continuous Power Dissipation (T
A
= +70°C)
Plastic DIP (derate 10.53mW/°C above +70°C) ...........842mW
Narrow SO (derate 8.70mWI°C above +70°C) .............696mW
Wide SO (derate 9.52mW/°C above +70°C).................762mW
CERDIP (derate 10.00mW/°C above +70°C)................800mW
Operating Temperature Ranges:
DG50_ACJ/CWE ..................................................0°C to +70°C
DG50_ABK........................................................-20°C to +85°C
DG50_ADJ/DY/EWE..........................................-40°C to +85°C
DG50_AAK/MY ...............................................-55°C to +125°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow)
PDIP, Wide SO, Narrow SO, CERDIP containing lead(Pb)..+240°C
PDIP, Wide SO, Narrow SO lead(Pb)-free ....................+260°C
DG508A/DG509A
Note 1: Signals on S_ or D_ exceeding V+ or V- are clamped by internal diodes. Limit forward-diode current to maximum current ratings
DG508AA/M
DG509AA/M
DG508AD/E/B/C
DG509AD/E/B/C
PARAMETER SYMBOL CONDITIONS
MIN TYP MAX MIN TYP MAX
UNITS
SWITCH
Analog Signal
V
ANALOG
-15 +15 -15 +15 V
V
D
= 10V,
I
S
= -200μA
170 400 170 450
Drain-Source On-
Resistance
R
DS(ON)
Sequence each
switch on,
V
A_L
= 0.8V,
V
A_H
= 2.4V (Note 4)
V
D
= -10V,
I
S
= 200μA
130 400 130 450

Greatest Change
in Drain-Source
On-Resistance
Between Channels
R
DS(ON)
R
DS(ON)
=
R
DS(ON)
max R
DS(ON)
min
R
DS(ON)






-10V 
V
S  10V
6 6 %
V
S
= 10V, V
D
= -10V 0.002 0.5 0.002 1
Source Off-
Leakage Current
I
S(OFF)
V
EN
= 0V
V
S
= -10V, V
D
= 10V -0.5 -0.005 -1 -0.005
nA
V
D
= 10V, V
S
= -10V 0.01 2 0.01 5
DG508A
V
D
= -10V, V
S
= 10V -2 -0.015 -5 -0.015
V
D
= 10V, V
S
= -10V 0.005 2 0.005 5
Drain Off-
Leakage
Current
DG509A
I
D(OFF)
V
EN
= 0V
V
D
= -10V, V
S
= 10V -2 -0.008 -5 -0.008
nA
V
S(all)
= V
D
= 10V 0.015 2 0.015 5
DG508A
V
S(all)
= V
D
= -10V -2 -0.03 -5 -0.03
V
S(all)
= V
D
= 10V 0.007 2 0.007 5
Drain On-
Leakage
Current
DG509A
I
D(ON)
Sequence each
switch on,
V
A_L
= 0.8V
V
A_H
= 2.4V
(Note 2)
V
S(all)
= V
D
= -10V -2 -0.015 -5 -0.015
nA