Datasheet

2 2006-01-31
BSM 25 GD 120 DN2
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
Static Characteristics
Gate threshold voltage
V
GE
= V
CE,
I
C
= 1 mA
V
GE(th)
4.5 5.5 6.5
V
Collector-emitter saturation voltage
V
GE
= 15 V, I
C
= 25 A, T
j
= 25 °C
V
GE
= 15 V, I
C
= 25 A, T
j
= 125 °C
V
CE(sat)
-
-
3.1
2.5
3.7
3
Zero gate voltage collector current
V
CE
= 1200 V, V
GE
= 0 V, T
j
= 25 °C
V
CE
= 1200 V, V
GE
= 0 V, T
j
= 125 °C
I
CES
-
-
2
0.5
-
0.8
mA
Gate-emitter leakage current
V
GE
= 20 V, V
CE
= 0 V
I
GES
- - 180
nA
AC Characteristics
Transconductance
V
CE
= 20 V, I
C
= 25 A
g
fs
10 - -
S
Input capacitance
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
C
iss
- 1650 -
pF
Output capacitance
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
C
oss
- 250 -
Reverse transfer capacitance
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
C
rss
- 110 -