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February 2013

FSFR1800 / FSFR1700-HS • Rev.1.0.1

FSFR-HS Series — Advanced Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter

FSFR-HS Series — Advanced Fairchild Power Switch

(FPS™) for Half-Bridge Resonant Converters

Features

 Variable Frequency Control with 50% Duty Cycle

for Half-Bridge Resonant Converter Topology

 High Efficiency through Zero Voltage Switching (ZVS)

 Built-in High-Side Gate Driver IC

 Internal UniFET™s with Fast-Recovery Type Body

Diode (t

=160 ns Typical)

 Fixed Dead Time (350 ns) Optimized for MOSFETs

 Operating Frequency Up to 600 kHz for Soft-Start

 Self Auto-Restart Operation for All Protections, Despite

External LV

Bias

 Line UVLO with Programmable Hysteresis Level

 Simple On/Off with Line UVLO Pin

 Easy Configuration and Compatibility with FAN7930 for

Line UVLO without External Components

 Protection Functions: Over-Voltage Protection (OVP),

Over-Current Protection (OCP), Abnormal Over-

Current Protection (AOCP), Internal Thermal

Shutdown (TSD)

Applications

 PDP and LCD TVs

 Desktop PCs and Servers

 Adapters

 Telecom Power Supplies

Description

The FSFR-HS is a highly integrated power switch

designed for high-efficiency half-bridge resonant

converters. Offering everything necessary to build a

reliable and robust resonant converter, the FSFR-HS

simplifies designs while improving productivity and

performance. The FSFR-HS combines power MOSFETs,

a high-side gate-drive circuit, an accurate current-

controlled oscillator, and built-in protection functions.

The high-side gate-drive circuit has a common-mode

noise cancellation capability, which provides stable

operation with excellent noise immunity. Using zero-

voltage-switching (ZVS) technique dramatically reduces

the switching losses and significantly improves efficiency.

The ZVS also reduces the switching noise noticeably,

even though the operating frequency increases. It allows

a small Electromagnetic Interference (EMI) filter, besides

the high operating frequency, to reduce the volume of the

resonant tank and to increase power density.

The FSFR-HS can be applied to resonant converter

topologies such as series resonant, parallel resonant,

and LLC resonant converters.

Related Resources

AN4151 — Half-Bridge LLC Resonant Converter Design

Using FSFR-Series Fairchild Power Switch (FPS™)

Ordering Information

Part Number Package

Operating

Junction

Temperature

DS(ON_MAX)

Maximum Output Power

without Heatsink

=350~400 V)

(1,2)

Maximum Output

Power with Heatsink

=350~400 V)

(1,2)

FSFR1800HS 9-SIP

-40 to +130°C 0.95 Ω 120 W 260 W

FSFR1800HSL

9-SIP

L-Forming

FSFR1700HS 9-SIP

-40 to +130°C 1.25 Ω 100 W 200 W

FSFR1700HSL

9-SIP

L-Forming

Notes:

1. The junction temperature can limit the maximum output power.

2. Maximum practical continuous power in an open-frame design at 50°C ambient.

Summary of content (16 pages)

PAGE 1
FSFR-HS Series — Advanced Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converters Features Description  Variable Frequency Control with 50% Duty Cycle for Half-Bridge Resonant Converter Topology  High Efficiency through Zero Voltage Switching (ZVS)  Built-in High-Side Gate Driver IC  Internal UniFET™s with Fast-Recovery Type Body Diode (trr=160 ns Typical)  Fixed Dead Time (350 ns) Optimized for MOSFETs  Operating Frequency Up to 600 kHz for Soft-Start  Self Auto-Restart Operation for A
PAGE 2
FSFR-HS Series — Advanced Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter Application Circuit Diagram Figure 1. Typical Application Circuit (LLC Resonant Half-Bridge Converter) Block Diagram Figure 2. Internal Block Diagram © 2011 Fairchild Semiconductor Corporation FSFR1800 / FSFR1700-HS • Rev.1.0.1 www.fairchildsemi.
PAGE 3
Figure 3. Package Diagram Pin Definitions Pin # Name Description 1 DL This is the drain of the high-side MOSFET, typically connected to the input DC link voltage. 2 LS This is the line-sensing pin for the input voltage Under-Voltage Lockout (UVLO). 3 RT This pin is used for controlling the switching frequency in normal operation.
PAGE 4
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Min. Max.
PAGE 5
TA=25°C, LVCC, HVCC =17 VDC and RT=26 kΩ unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Unit MOSFET Section BVDSS Drain-to-Source Breakdown Voltage RDS(ON) On-State Resistance trr Body Diode Reverse (7) Recovery Time CISS Input Capacitance(7) COSS Output Capacitance(7) ID=200 μA, TA=25°C 500 V ID=200 μA, TA=125°C 540 FSFR1800HS/L VGS=10 V, ID=3.0 A 0.77 0.95 FSFR1700HS/L VGS=10 V, ID=2.0 A 1.00 1.25 FSFR1800HS/L VGS=0 V, IDIODE=7.
PAGE 6
TA=25°C, LVCC, HVCC =17 VDC and RT=26 kΩ unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Unit 0.07 0.12 0.17 Protection Section VRT,RESET Threshold Voltage to Begin Restart tDELAY,RESET Delay to Disable OSC Circuit After Protection fosc=50 kHz 20 V ms VLINE On Threshold of Input Voltage 2.38 2.50 2.62 V ILINE Hysteresis Current for Line UVLO 7.5 9.5 11.
PAGE 7
These characteristic graphs are normalized at TA=25°C. 1.1 1.1 1.05 1.05 1 1 0.95 0.95 0.9 0.9 -50 -25 Figure 4. 0 25 50 75 -50 100 Low-Side MOSFET Duty Cycle vs. Temperature -25 0 25 50 75 100 Figure 5. Switching Frequency vs. Temperature 1.1 1.1 1.05 1.05 1 1 0.95 0.95 0.9 0.9 -50 -25 0 25 50 75 100 -50 Figure 6. High-Side VCC (HVCC) Start vs. Temperature -25 0 25 50 75 100 Figure 7. High-Side VCC (HVCC) Stop vs. Temperature 1.1 1.1 1.05 1.05 1 1 0.
PAGE 8
1.1 1.1 1.05 1.05 Normalized at 25OC Normalized at 25OC These characteristic graphs are normalized at TA=25°C. 1 0.95 1 0.95 0.9 0.9 -50 -25 0 25 50 75 -50 100 -25 0 25 Temp (OC) 50 75 100 Temp (OC) Figure 10. LVCC OVP Voltage vs. Temperature Figure 11. RT Voltage vs. Temperature 1.1 Normalized at 25OC 1.05 1 0.95 0.9 -50 -25 0 25 50 75 100 Temp (OC) Figure 12. VRT,RESET vs. Temperature Figure 13. OCP Voltage vs. Temperature Figure 14. VLINE vs.
PAGE 9
These characteristic graphs are normalized at TA=25°C. Figure 16. tDELAY,RESET vs. Temperature © 2011 Fairchild Semiconductor Corporation FSFR1800 / FSFR1700-HS • Rev.1.0.1 Figure 17. VRT,RESET vs. Temperature www.fairchildsemi.
PAGE 10
1. Basic Operation: FSFR-HS series is designed to drive high-side and low-side MOSFETs complementarily with 50% duty cycle. A fixed dead time of 350 ns is introduced between consecutive transitions, as shown in Figure 18. Assuming the saturation voltage of opto-coupler transistor is 0.2 V, the maximum switching frequency is determined as: f max = Once LVCC is higher than LVCC,START = 12.5 V, the IC starts to operate, generates the low-side gate signal, and drives the low-side MOSFET.
PAGE 11
f ss = 1 [ Hz ] 792 p × R min || R SS + 0.54 μ (3) The soft-start time, tSS, can be calculated by: tSS = 3 × RSS ⋅ CSS [ s ] Once a fault condition is detected, switching is instantly terminated and the MOSFETs remain off. When LVCC falls to the LVCC stop voltage of 10 V and VRT is lower than VRT,RESET of 0.1 V, the protection is reset. The FSFR-HS resumes normal operation when LVCC reaches the start voltage of 12.5 V. (4) 4.
PAGE 12
Cr Np Ns The start and stop input-voltage can be calculated as: R1 + R 2 [V ] R2 = Vdc−link ,STOP + I LINE × R1 [V ] Ns Vdc −link ,STOP = VLINE × (6) Vdc−link ,START (7) Control IC VCS I DS CS SG PG Rsense V CS IDS Figure 27. Half-Wave Sensing I DS Figure 25. Half-Wave Sensing VCS 7. Simple Remote-On/Off: The power stage can be shutdown with optional Auto-Restart Mode, as shown in Figure 26.
PAGE 13
Figure 29. Capacitive Sensing Figure 30. Example of Duty Balancing © 2011 Fairchild Semiconductor Corporation FSFR1800 / FSFR1700-HS • Rev.1.0.1 www.fairchildsemi.com 13 FSFR-HS Series — Advanced Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter 9. PCB Layout Guidelines: Duty imbalance problems may occur due to the radiated noise from the main transformer, the inequality of the secondary side leakage inductances of main transformer, and so on.
PAGE 14
Figure 31. 9-Lead, Single Inline Package (SIP) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
PAGE 15
FSFR-HS Series — Advanced Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter Physical Dimensions Figure 32. 9-Lead, Single Inline Package (SIP), L-Forming Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 16
FSFR-HS Series — Advanced Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter © 2011 Fairchild Semiconductor Corporation FSFR1800 / FSFR1700-HS • Rev.1.0.1 www.fairchildsemi.