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ManualsBrandsElixir Manualscomputer componentsM2F1G64CBH4B5P-CG
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M2F1G64CBH4B5P/ M2F1G64CBH4B9P
M2F(X)2G64CB88B7N / M2F(X)2G64CB88BHN
M2F(X)4G64CB8HB5N / M2F(X)4G64CB8HB9N
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600 / PC3-12800
Unbuffered DDR3 SDRAM DIMM
REV 1.0 1
05/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Based on DDR3-1066/1333 128Mx16 (1GB) and DDR3-1066/1333/1600 256Mx8 (2GB/4GB) SDRAM B-Die
Features
•Performance:
Speed Sort
PC3-8500
PC3-10600
PC3-12800
Unit
-BE
-CG
-DG
DIMM CAS Latency
7
9
9
fck – Clock Frequency
533
667
800
MHz
tck – Clock Cycle
1.875
1.5
1.25
ns
fDQ – DQ Burst Frequency
1066
1333
1600
Mbps
• 240-Pin Dual In-Line Memory Module (UDIMM)
•128Mx64 (1GB) / 256Mx64 (2GB) / 512Mx64 (4GB) DDR3
Unbuffered DIMM based on 256Mx8 DDR3 SDRAM B-Die
devices.
• Intended for 533MHz/667MHz/800MHz applications
• Inputs and outputs are SSTL-15 compatible
• V
DD
= V
DDQ
= 1.5V ±0.075V
• SDRAMs have 8 internal banks for concurrent operation
• Differential clock inputs
• Data is read or written on both clock edges
• DRAM DLL aligns DQ and DQS transitions with clock transitions.
• Address and control signals are fully synchronous to positive
clock edge
• Nominal and Dynamtic On-Die Termination support
• Halogen free product
• Programmable Operation:
- DIMM  Latency: 6,7,8,9
- Burst Type: Sequential or Interleave
- Burst Length: BC4, BL8
- Operation: Burst Read and Write
• Two different termination values (Rtt_Nom & Rtt_WR)
• 14/10/1 (row/column/rank) Addressing for 1GB
• 15/10/1 (row/column/rank) Addressing for 2GB
• 15/10/2 (row/column/rank) Addressing for 4GB
• Extended operating temperature rage
• Auto Self-Refresh option
• Serial Presence Detect
• Gold contacts
•1GB: SDRAMs are in 96-ball BGA Package
• 2GB: SDRAMs are in 78-ball BGA Package
• 4GB: SDRAMs are in 78-ball BGA Package
• RoHS compliance
Description
M2F1G64CBH4B5(9)P / M2F(X)2G64CB88B7N / M2F(X)4G64CB8HB5N / M2F(X)2G64CB88BHN / M2F(X)4G64CB8HB9N are 240-Pin
Double Data Rate 3 (DDR3) Synchronous DRAM Unbuffered Dual In-Line Memory Module (UDIMM), organized as one rank of 128Mx64
(1GB) / 256Mx64 (2GB) and two ranks of 512Mx64 (4GB) high-speed memory array. Modules use four 128Mx16 (1GB) 96-ball BGA
packaged devices, eight 256Mx8 (2GB) 78-ball BGA packaged devices and sixteen 256Mx8 (4GB) 78-ball BGA packaged devices. These
DIMMs are manufactured using raw cards developed for broad industry use as reference designs. The use of these common design files
minimizes electrical variation between suppliers. All Elixir DDR3 SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a
5.25” long space-saving footprint.
The DIMM is intended for use in applications operating of 533MHz/667MHz/800MHz clock speeds and achieves high-speed data transfer
rates of 1066Mbps/1333Mbps/1600Mbps. Prior to any access operation, the device  latency and burst/length/operation type must be
programmed into the DIMM by address inputs A0-A13 (1GB) / A0-A14 (2GB/4GB) and I/O inputs BA0~BA2 using the mode register set
cycle.
The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of SPD data
are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.

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