Datasheet
Table Of Contents
PPS1045-3G | PPS1060-3G
Characteristics Kennwerte
Type
Typ
Forward voltage
Durchlass-Spannung
Forward voltage
Durchlass-Spannung
Forward voltage
Durchlass-Spannung
V
F
[V]
1
) @ I
F
[A] @ T
j
V
F
[V]
1
) @ I
F
[A] @ T
j
V
F
[V]
1
) @ I
F
[A] @ T
j
PPS1045-3G typ. 0.32 5 125°C < 0.44 5 25°C < 0.50 10 25°C
PPS1060-3G/-Q tbd 5 125°C tbd 5 25°C < 0.59 10 25°C
Leakage current
Sperrstrom
PPS1045-3G
T
j
= 25°C
T
j
= 100°C
V
R
= V
RRM
I
R
< 200 µA
typ. 10 mA
PPS1060-3G/-Q
T
j
= 25°C
T
j
= 100°C
V
R
= V
RRM
I
R
< 40 µA
tbd
Typical junction capacitance – Typische Sperrschichtkapazität V
R
= 4 V C
j
510 pF
Typ. thermal resistance junction to case – Typ. Wärmewiderstand Sperrschicht – Gehäuse R
thC
2 K/W
2
)
Dimensions - Maße [mm]
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet
1 Both anode pins connected – Beide Anodenanschlüsse kontaktiert
2 Measured at heat flange – Gemessen an der Kühlfahne
2 http://www.diotec.com/ © Diotec Semiconductor AG
10
2
10
1
1
10
-1
10
-2
[mA]
I
R
0
V
RRM
40 60 80 100
[%]
Typ. instantaneous leakage current vs. rev. voltage
Typ. Sperrstrom (Augenblickswert) ü. Sperrspannung
T = 2 5 ° C
j
T = 1 0 0 ° C
j
T = 1 2 5 ° C
j
T = 7 5 ° C
j
T = 5 0 ° C
j
T = 1 5 0 °C
j
120
100
80
60
40
20
0
[%]
I
FAV
Rated forward current vs. temp. of the case )
2
Zul. Richtstrom in Abh. v. d. Temp. des Gehäuses )
2
[°C]
T
C
150100
50
0
DC for w ar d
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
10
2
10
1
10
-1
10
-2
[A]
I
F
0
V
F
0.4 0.6
[V]
1.0
T = 25 °C
j
T = 1 2 5 ° C
j
PP S1 0 4 5 -3 G
10
2
10
1
10
-1
10
-2
[A]
I
F
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
0 V
F
0.4 0.6 [V] 1.0
T = 2 5 ° C
j
T = 1 2 5 °C
j
PP S 1 0 5 0 ... P P S 1 0 6 0