User's Manual
Table Of Contents
- General Description
- More Information
- Contents
- Overview
- Pad Connection Interface
- Recommended Host PCB Layout
- Power Supply Connections and Recommended External Components
- Electrical Specifications
- Environmental Specifications
- Regulatory Information
- Packaging
- Ordering Information
- Acronyms
- Document Conventions
- Document History Page
- Sales, Solutions, and Legal Information
PRELIMINARY
CYBLE-224110-00
Document Number: 002-11264 Rev. *A Page 27 of 43
Memory
System Resources
Power-on-Reset (POR)
T
SSELSCK
SSEL valid to first SCK valid edge 100 – – ns
Table 40. Fixed SPI Slave Mode AC Specifications (continued)
Parameter Description Min Typ Max Unit
Note
5. It can take as much as 20 ms to write to flash. During this time, the device should not be reset, or flash operations will be interrupted and cannot be relied on to have
completed. Reset sources include the XRES pin, software resets, CPU lockup states and privilege violations, improper power supply levels, and watchdogs. Make
certain that these are not inadvertently activated.
Table 41. Flash DC Specifications
Parameter Description Min Typ Max Unit Details/Conditions
V
PE
Erase and program voltage 1.71 – 5.5 V –
T
WS48
Number of Wait states at 32–48 MHz 2 – – – CPU execution from flash
T
WS32
Number of Wait states at 16–32 MHz 1 – – – CPU execution from flash
T
WS16
Number of Wait states for 0–16 MHz 0 – – – CPU execution from flash
Table 42. Flash AC Specifications
Parameter Description Min Typ Max Unit Details/Conditions
T
ROWWRITE
[5]
Row (block) write time (erase and program) – – 20 ms Row (block) = 256 bytes
T
ROWERASE
[5]
Row erase time – – 13 ms –
T
ROWPROGRAM
[5]
Row program time after erase – – 7 ms –
T
BULKERASE
[5]
Bulk erase time (256 KB) – – 35 ms –
T
DEVPROG
[5]
Total device program time – – 25 seconds –
F
END
Flash endurance 100 K – – cycles –
F
RET
Flash retention. T
A
≤ 55 °C, 100 K P/E cycles 20 – – years –
F
RET2
Flash retention. T
A
≤ 85 °C, 10 K P/E cycles 10 – – years –
Table 43. POR DC Specifications
Parameter Description Min Typ Max Unit Details/Conditions
V
RISEIPOR
Rising trip voltage 0.80 – 1.45 V –
V
FALLIPOR
Falling trip voltage 0.75 – 1.40 V –
V
IPORHYST
Hysteresis 15 – 200 mV –
Table 44. POR AC Specifications
Parameter Description Min Typ Max Unit Details/Conditions
T
PPOR_TR
Precision power-on reset (PPOR) response
time in Active and Sleep modes
––1µs –
Table 45. Brown-Out Detect
Parameter Description Min Typ Max Unit Details/Conditions
V
FALLPPOR
BOD trip voltage in Active and Sleep modes 1.64 – – V –
V
FALLDPSLP
BOD trip voltage in Deep Sleep 1.4 – – V –