User's Manual

1-20
Kapitel 1: Produkteinführung
Kapitel 1
DDR3 1600 MHz Fähigkeit
Händler Teil Nr. Größe
SS/
DS
Chip
Marke
Chip Nr. Timing Spannung
DIMM
Steckplatzu-
nterstützung
(optional)
2 4
Patriot PV316G160C9K(XMP) 14GB (4x
4GB )
SS - - 1600-9-9-
9-24
1.5
Patriot PV316G160C9K(XMP) 16GB (2x
8GB)
SS - - 1600-9-9-
9-24
1.5
SanMax SMD-4G28N1P-16KM 4GB SS ELPIDA J4208BBBG-GN-F 1600 -
SanMax SMD-4G68HP-16KZ 4GB DS Hynix H5TQ2G83BFRPBC - 1.5
SanMax SMD-4G68NG-16KK 4GB DS ELPIDA J2108BDBG-GN-F - -
SanMax SMD-8G28NP-16KM 8GB DS ELPIDA J4208BBBG-GN-F 1600 -
Silicon
Power
SP002GBLTU160V02(XMP) 2GB SS S-POWER 20YT5NG 9-11-
11-11
1.5
Silicon
Power
SP004GBLTU004V02(XMP) 4GB DS S-POWER 20YT5NG 9-9-9-24 1.5
Silicon
Power
SP004GXLYU160NSA(XMP) 4GB SS - - 1627-9-9-
9-27
-
Silicon
Power
SP008GXLYU008NSA(XMP) 8GB DS - - 1627-9-9-
9-27
-
Team TED34GM1600C11BK 4GB DS Hynix H5TC2G83EFR 11-11-
11-11
1.5
Team TED38GM1638C38BK 8GB DS Hynix H4TQ4G84AFR 11-11-
11-11
1.5
Team TLD34G1600HC9BK(XMP) 8GB (8x
8GB )
DS - - 9-9-9-24 1.5
Team TLD38G1638HC9BK(XMP) 16GB (2x
8GB)
DS - - 9-9-9-24 1.5
Team TXD34096M1600HC9-
D(XMP)
4GB DS Hynix H5TC2G83BFRH9A 9-9-9-24 1.5
Transcend TS1GLK64V6H(620945) 8GB DS SAMSUNG K4B4G0846B - -
Transcend TS1GLK64W6H 8GB DS SAMSUNG K4B4G0846B 11-11-11-
28-1
-
Transcend TS512MLK64W6H 4GB SS SAMSUNG K4B4G0846B 12-12-12-
22-2
-
UMAX 84E44G93UM-16BPSYW 4GB SS UMAX U2S96D96TP-96 1611-11-
11-11-11
-
UMAX 48E48G48UM-48BPSYW 8GB DS UMAX U2S96D96TP-96 1611-11-
11-11-11
-