Datasheet

ADF4158 Data Sheet
Rev. E | Page 4 of 36
SPECIFICATIONS
AV
DD
= DV
DD
= 2.7 V to 3.3 V, V
P
= AV
DD
to 5.5 V, AGND = DGND = 0 V, T
A
= T
MIN
to T
MAX
, dBm referred to 50 Ω, unless
otherwise noted.
Table 1.
C Version
1
Parameter Min Typ Max Unit Test Conditions/Comments
RF CHARACTERISTICS
RF Input Frequency (RF
IN
) 0.5 6.1 GHz −10 dBm min to 0 dBm max; for lower frequencies, ensure
slew rate (SR) > 400 V/µs
−15 dBm min to 0 dBm max for 2 GHz to 4 GHz RF input
frequency
REFERENCE CHARACTERISTICS
REF
IN
Input Frequency 10 260 MHz For f < 10 MHz, use a dc-coupled CMOS-compatible
square wave, slew rate > 25 V/µs
16 MHz If an internal reference doubler is enabled
REF
IN
Input Sensitivity 0.4 AV
DD
V p-p Biased at AV
DD
/2
2
REF
IN
Input Capacitance 10 pF
REF
IN
Input Current ±100 µA
PHASE DETECTOR
Phase Detector Frequency
3
32 MHz
CHARGE PUMP
I
CP
Sink/Source Programmable
High Value 5 mA With R
SET
= 5.1 kΩ
Low Value 312.5 µA
Absolute Accuracy 2.5 % With R
SET
= 5.1 kΩ
R
SET
Range 2.7 10 kΩ
I
CP
Three-State Leakage Current 1 nA Sink and source current
Matching 2 % 0.5 V < V
CP
< V
P
– 0.5 V
I
CP
vs. V
CP
2 % 0.5 V < V
CP
< V
P
– 0.5 V
I
CP
vs. Temperature 2 % V
CP
= V
P
/2
LOGIC INPUTS
V
INH
, Input High Voltage 1.4 V
V
INL
, Input Low Voltage 0.6 V
I
INH
/I
INL
, Input Current ±1 µA
C
IN
, Input Capacitance 10 pF
LOGIC OUTPUTS
V
OH
, Output High Voltage 1.4 V Open-drain output chosen; 1 kΩ pull-up to 1.8 V
V
OH
, Output High Voltage V
DD
− 0.4 V CMOS output chosen
I
OH
, Output High Current 100 µA
V
OL
, Output Low Voltage 0.4 V I
OL
= 500 µA
POWER SUPPLIES
AV
DD
2.7 3.3 V
DV
DD
AV
DD
V
P
AV
DD
5.5 V
I
DD
23 32 mA