Datasheet

ADF4110/ADF4111/ADF4112/ADF4113 Data Sheet
Rev. F | Page 6 of 28
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted
Table 3.
Parameter Rating
AV
DD
to GND
1
−0.3 V to +7 V
AV
DD
to DV
DD
−0.3 V to +0.3 V
V
P
to GND −0.3 V to +7 V
V
P
to AV
DD
−0.3 V to +5.5 V
Digital I/O Voltage to GND −0.3 V to V
DD
+ 0.3 V
Analog I/O Voltage to GND −0.3 V to V
P
+ 0.3 V
REF
IN
, RF
IN
A, RF
IN
B to GND −0.3 V to V
DD
+ 0.3 V
RF
IN
A to RF
IN
B ±320 mV
Operating Temperature Range
Industrial (B Version) −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Maximum Junction Temperature 150°C
TSSOP θ
JA
Thermal Impedance
150.4°C/W
LFCSP θ
JA
Thermal Impedance
(Paddle Soldered)
122°C/W
LFCSP θ
JA
Thermal Impedance
(Paddle Not Soldered)
216°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) 215°C
Infrared (15 sec) 220°C
1
GND = AGND = DGND = 0 V.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <2 kV, and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
6425 (CMOS) and 303 (Bipolar).
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.