Datasheet

Data Sheet ADA4075-2
Rev. C | Page 3 of 24
SPECIFICATIONS
V
SY
= ±15 V, V
CM
= 0 V, T
A
= 25°C, SOIC package, unless otherwise noted.
Table 2.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
V
OS
0.2
1
mV
−40°C ≤ T
A
≤ +125°C 1.2 mV
Input Bias Current I
B
30 100 nA
−40°C ≤ T
A
≤ +125°C 150 nA
Input Offset Current
I
OS
5
50
nA
−40°C ≤ T
A
≤ +125°C
75
nA
Input Voltage Range −40°C ≤ T
A
≤ +125°C −12.5 +12.5 V
Common-Mode Rejection Ratio CMRR V
CM
= −12.5 V to +12.5 V 110 118 dB
−40°C ≤ T
A
≤ +125°C 106 dB
Large Signal Voltage Gain
A
VO
R
L
= 2 kΩ, V
O
= −11 V to +11 V
114
117
dB
−40°C ≤ T
A
≤ +125°C 108 dB
R
L
= 600 Ω, V
O
= −10 V to +10 V 112 117 dB
−40°C ≤ T
A
≤ +125°C 106 dB
Offset Voltage Drift ∆V
OS
/∆T −40°C ≤ T
A
≤ +125°C 0.3 µV/°C
Input Resistance, Differential Mode
R
INDM
1.5
MΩ
Input Resistance, Common Mode R
INCM
500 MΩ
Input Capacitance, Differential Mode C
INDM
2.4 pF
Input Capacitance, Common Mode C
INCM
2.1 pF
OUTPUT CHARACTERISTICS
Output Voltage High
V
OH
R
L
= 2 kΩ to GND
12.8
13
V
−40°C ≤ T
A
≤ +125°C 12.5 V
R
L
= 600 Ω to GND
12.4
12.8
V
−40°C ≤ T
A
≤ +125°C 12 V
V
SY
= ±18 V, R
L
= 600 Ω to GND 15 15.8 V
−40°C ≤ T
A
≤ +125°C
14
V
Output Voltage Low V
OL
R
L
= 2 kΩ to GND −14 −13.6 V
−40°C ≤ T
A
≤ +125°C
−13
V
R
L
= 600 Ω to GND −13.6 −13 V
−40°C ≤ T
A
≤ +125°C −12.5 V
V
SY
= ±18 V, R
L
= 600 Ω to GND −16.6 −16 V
−40°C ≤ T
A
≤ +125°C
−15
V
Short-Circuit Current
I
SC
40
mA
Closed-Loop Output Impedance Z
OUT
f = 1 kHz, A
V
= 1 0.1 Ω
POWER SUPPLY
Power Supply Rejection Ratio PSRR V
SY
= ±4.5 V to ±18 V 106 110 dB
−40°C ≤ T
A
≤ +125°C 100 dB
Supply Current per Amplifier I
SY
V
SY
= ±4.5 V to ±18 V, I
O
= 0 mA 1.8 2.25 mA
−40°C ≤ T
A
≤ +125°C
3.35
mA
DYNAMIC PERFORMANCE
Slew Rate
SR
R
L
= 2 kΩ, A
V
= 1
12
V/µs
Settling Time
t
S
To 0.01%, V
IN
= 10 V step, R
L
= 1 kΩ
3
µs
Gain Bandwidth Product GBP R
L
= 1 MΩ, C
L
= 35 pF, A
V
= 1 6.5 MHz
Phase Margin Φ
M
R
L
= 1 MΩ, C
L
= 35 pF, A
V
= 1 60 Degrees
THD + NOISE
Total Harmonic Distortion and Noise THD + N R
L
= 2 kΩ, A
V
= 1, V
IN
= 3 V rms, f = 1 kHz 0.0002 %
NOISE PERFORMANCE
Voltage Noise e
n
p-p f = 0.1 Hz to 10 Hz 60 nV p-p
Voltage Noise Density
e
n
f = 1 kHz
2.8
nV/√Hz
Current Noise Density i
n
f = 1 kHz 1.2 pA/√Hz
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