Datasheet

EL67I1B16_DDR3-2000X(CL=9)_2GB(128Mx8_Pb free) Rev.0 2009/01/16 Page 6 of 7

Absolute Maximum RatingsΚ

ΚΚ

Parameter Symbol Value Unit

Voltage on VDD supply relative to Vss VDD -0.4 ~ 2.15 V

Voltage on VDDQ pin relative to Vss VDDQ -0.4 ~ 2.15 V

Voltage on any pin relative to Vss VIN, Vout -0.4 ~ 2.15 V

Storage temperature TStg -55 ~ +100

Note: DDR3 SDRAM component specification

Operation Temperature Condition

Parameter Symbol Value Unit Note

Normal Operating Temperature Range TC 0~+85 1

Extended Temperature Range (Optional) TC +85~+95 1

Note: (1) If the DRAM case temperature is above 85 , the Auto-Refresh command interval has to be reduced to tREFI=3.9us.

DC Operating Condition：

：：

：

Voltage referenced to Vss = 0V, VDD&VDDQ=1.5V±0.075V, Tc = 0 to 85

Parameter Symbol Min Max Unit Note

VDD 1.425 1.575 V 1,2 Supply Voltage

VDDSPD 1.7 3.6 V

Supply Voltage for Output VDDQ 1.425 1.575 V 1,2

I/O Reference Voltage(CMD/ADD) VREFCA, (DC) 0.49 x VDDQ 0.51 x VDDQ V 3,4

I/O Reference Voltage(DQ) VREFDQ, (DC) 0.49 x VDDQ 0.51 x VDDQ V 3,4

Termination Voltage VTT VDDQ/2 - TBD VDDQ/2 +TBD V

Note: (1) Under all conditions VDDQ must be less than or equal to VDD.

(2) VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.

(3) The AC peak noise on VREF may not allow VREF to deviate from VREF(DC) by more than

1% VDD

(for reference: approx.

15mV)

(4) For reference: approx. VDD/2 15mV