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SLUS338A – JUNE 1993 – REVISED MAY 2001

   

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FEATURES

Matched, Four-Diode Monolithic Array

D High Peak Current

D Low-Cost MINIDIP Package

D Low-Forward Voltage

D Parallelable for Lower V

or Higher I

D Fast Recovery Time

D Military Temperature Range Available

DESCRIPTION

This four-diode array is designed for general

purpose use as individual diodes or as a

high-speed, high-current bridge. It is particularly

useful on the outputs of high-speed power

MOSFET drivers where Schottky diodes are

needed to clamp any negative excursions caused

by ringing on the driven line.These diodes are also

ideally suited for use as voltage clamps when

driving inductive loads such as relays and

solenoids, and to provide a path for current

free-wheeling in motor drive applications.The use

of Schottky diode technology features high

efficiency through lowered forward voltage drop

and decreased reverse recovery time.This single

monolithic chip is fabricated in both hermetic

CERDIP and copper-eaded plastic packages.

The UC1611 in ceramic is designed for –55°C to

125°C environments but with reduced peak

current capability: while the UC3611 in plastic has

higher current rating over a 0°C to 70°C ambient

temperature range.

AVAILABLE OPTIONS

Packaged Devices

= T

SOIC Wide (DW) DIL (J) DIL (N)

–55°C to 125°C UC1611DW UC1611J UC1611N

0°C to 70°C UC3611DW UC3611J UC3611N

        

         

       

   

Summary of content (8 pages)

PAGE 1
SLUS338A – JUNE 1993 – REVISED MAY 2001 FEATURES D Matched, Four-Diode Monolithic Array D High Peak Current D Low-Cost MINIDIP Package D Low-Forward Voltage D Parallelable for Lower VF or Higher IF D Fast Recovery Time D Military Temperature Range Available DESCRIPTION This four-diode array is designed for general purpose use as individual diodes or as a high-speed, high-current bridge.
PAGE 2
SLUS338A – JUNE 1993 – REVISED MAY 2001 DW PACKAGE (TOP VIEW) J OR N PACKAGE (TOP VIEW) absolute maximum ratings over operating free-air temperature (unless otherwise noted)† Peak inverse voltage (per diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V Diode-to-diode voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PAGE 3
SLUS338A – JUNE 1993 – REVISED MAY 2001 APPLICATION INFORMATION REVERSE CURRENT vs VOLTAGE FORWARD CURRENT vs VOLTAGE 1000 5.0 500 3.0 2.0 1.0 T J = 125 °C 100 Forward Current – A Leakage Current – µA 300 200 50 30 20 10 5 0.3 0.2 T J = –55 °C 0.1 0.05 0.03 0.02 T J = 25 °C 0.01 T J = 25 °C T J = 75 °C 0.5 0.005 3 2 T J = 125 °C 0.003 0.002 0.001 1 0 10 20 30 40 50 Reverse Voltage – V 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.
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SLUS338A – JUNE 1993 – REVISED MAY 2001 APPLICATION INFORMATION Figure 4. Transformer Coupled Drive Circuits Figure 5. Linear Regulations 4 www.ti.
PAGE 5
PACKAGE OPTION ADDENDUM www.ti.
PAGE 6
PACKAGE OPTION ADDENDUM www.ti.com 19-Feb-2015 (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined.
PAGE 7
PACKAGE OPTION ADDENDUM www.ti.
PAGE 8
IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.